COMPOSITION FOR ETCHING, METHOD FOR ETCHING INSULATOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND NOVEL COMPOUNDS
申请人:SK Innovation Co., Ltd.
公开号:US20200377793A1
公开(公告)日:2020-12-03
An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1:
wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR
1
, O, PR
2
and S, where R
1
to R
2
are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and R
a
to R
c
are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.
一种蚀刻组合物包含
磷酸,
磷酸无
水物,由以下公式1所代表的化合物,以及包含至少一个
硅(Si)原子的
硅烷化合物,不包括由公式1所代表的化合物: 公式1中,A是n价基团,n为1到6的整数,L是直接键或烃基亚烷基,Y从NR1,O,PR2和S中选择,其中R1到R2独立地是氢,卤素,取代或未取代的烃基团,或非烃基团,X和Z独立地从N,O,P和S中选择,R1到R2独立地是未共享的电子对,氢,或取代或未取代的烃基团。