A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of -NR1R2, -N(R4)(CH2)nN(R5R6), -N=C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer deposition (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Methods of low temperature vapour phase deposition of metal oxide films, such as SiO2 films, are also provided.
提供一类有机
金属化合物。这些化合物的结构对应于公式1(A)x-M-(OR3)4-x,其中:A选自以下组:-NR1R2,-N(R4)(
CH2)nN(R5R6),-N=C(NR4R5)(NR6R7),OCOR1,卤素和Y;R1和R2独立地选自以下组:H和具有1至8个碳原子的环状或非环状烷基,但必须满足R1和R2中至少有一个不是H;R4,R5,R6和R7独立地选自以下组:H和具有1至4个碳原子的非环状烷基;Y选自包含至少一个氮原子的3-至13元杂环基团;R3是具有1至6个碳原子的环状或非环状烷基;M选自Si,Ge,Sn,Ti,Zr和Hf;x是1至3的整数;n是1至4的整数。本发明的化合物可用作
化学相沉积过程(如原子层沉积(ALD),
化学气相沉积(CVD),等离子体辅助ALD和等离子体辅助CVD)中的前体。还提供了低温气相沉积金属氧化物薄膜(如SiO2薄膜)的方法。