Halogenated organoaminosilane precursors and methods for depositing films comprising same
申请人:Air Products and Chemicals, Inc.
公开号:US08993072B2
公开(公告)日:2015-03-31
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:
XmR1nHpSi(NR2R3)4-m-n-p I
wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
本文描述了形成薄膜的前体和方法。在其中一个方面,提供了具有I式的前体:XmR1nHpSi(NR2R3)4-m-n-p
其中,X选自Cl、Br、I;R1选自直链或支链C1-C10烷基、C2-C12烯基、C2-C12炔基、C4-C10环烷基和C6-C10芳基;R2选自直链或支链C1-C10烷基、C3-C12烯基、C3-C12炔基、C4-C10环烷基和C6-C10芳基;R3选自支链C3-C10烷基、C3-C12烯基、C3-C12炔基、C4-C10环烷基和C6-C10芳基;m为1或2;n为0、1或2;p为0、1或2;m+n+p小于4,其中R2和R3连或不连形成环。