AMINO(BROMO)SILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS AND METHODS OF USING THE SAME
申请人:American Air Liquide, Inc.
公开号:US20160108064A1
公开(公告)日:2016-04-21
Disclosed are Si-containing film forming compositions, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed Si-containing film forming composition comprising an amino(bromo)silane precursor having the formula:
SiH
x
Br
y
(NR
1
R
2
)
4-x-y
wherein x=0, 1 or 2; y=1, 2 or 3; x+y<4; each R
1
and R
2
is independently selected from C
1
-C
6
alkyl, aryl, or hetero group; and R
1
and R
2
may be joined to form a cyclic nitrogen-containing heterocycle. The disclosed Si-containing film forming compositions includes an amino(bromo)silane precursor selected from the group consisting of SiH
2
Br(NEt
2
), SiH
2
Br(N(iPr)
2
), SiH
2
Br(N(iBu)
2
) and SiBr(NMe
2
)
3
.
本发明涉及含硅薄膜形成组合物、其合成方法以及使用它们通过蒸发沉积工艺沉积含硅薄膜的方法。所述含硅薄膜形成组合物包括具有以下式子的氨基(溴)硅烷前体:SiHxBry(NR1R2)4-x-y,其中x=0、1或2;y=1、2或3;x+y<4;每个R1和R2独立地选自C1-C6烷基、芳基或杂原子基团;R1和R2可以结合形成含氮杂环。所述含硅薄膜形成组合物包括从SiH2Br(NEt2)、SiH2Br(N(iPr)2)、SiH2Br(N(iBu)2)和SiBr(NMe2)3组成的氨基(溴)硅烷前体。