申请人:Hyundai Electronics Industries Co., Ltd.
公开号:US05750680A1
公开(公告)日:1998-05-12
N-vinyllactam derivatives protected at the 3-position are provided and represented by the following formula (I). These are polymerized into homo- and copolymers for use in microlithography of semiconductor manufacture. The polymers are used as a photoresist material suitable for a deep UV process so that pictures of high sensitivity and high resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in pattern formation can be accomplished through the use of the photoresist of the invention. ##STR1##
提供并代表以下公式(I)中3位保护的N-乙烯基内酰胺衍生物。这些被聚合成同聚物和共聚物,用于半导体制造的微光刻。这些聚合物用作适合深紫外工艺的光致抗蚀剂材料,因此可以获得高灵敏度和高分辨率的图像。此外,通过使用发明的光致抗蚀剂,可以形成超细电路,并且可以在图案形成方面实现非凡的改进。