BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION
申请人:MATSUTANI Hiroshi
公开号:US20110313122A1
公开(公告)日:2011-12-22
Interlayer insulating films
5,7
(insulating films) provided in a memory capacitor cell
8
are formed between a gate electrode
3
and a counter electrode
8
C formed on a silicon wafer
1.
The interlayer insulating films
5,7
comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10
−8
A/cm
2
.
存储器电容单元中提供的绝缘膜(绝缘膜)是在硅片1上形成的栅极3和对电极8C之间形成的。绝缘膜5,7包括一种基于硼氮烷的树脂,其介电常数不大于2.6,杨氏模量为5 GPa或更大,泄漏电流不大于1×10^-8A/cm2。