There is provided a method of manufacturing a semiconductor quantum dot including the following steps (A1) and (B1):
a step (A1) of causing a nanoparticle including a specific compound semiconductor and a salt of a specific metal a1 to react with each other to introduce the metal a1 into a surface layer of the nanoparticle; and
a step (B1) of causing the nanoparticle in which the metal a1 is introduced into the surface layer and a salt of a specific metal b1 to react with each other to introduce the metal b1 into the surface layer of the nanoparticle.
There is provided a semiconductor quantum dot having a structure in which a specific metal a1 and/or a specific metal b1 is introduced into a surface layer of a nanoparticle including a specific compound semiconductor.
本发明提供了一种半导体量子点的制造方法,包括以下步骤(A1)和(B1):
使包括特定化合物半导体和特定
金属 a1 的盐的纳米粒子相互反应以将
金属 a1 引入纳米粒子的表面层的步骤(A1);以及
使将
金属 a1 引入表层的纳米粒子和特定
金属 b1 的盐相互反应,将
金属 b1 引入纳米粒子表层的步骤 (B1)。
本发明提供了一种半导体量子点,其结构是将特定
金属 a1 和/或特定
金属 b1 引入包括特定化合物半导体的纳米粒子的表面层。