双(叔-丁基黄酰基)重氮甲烷 | 138529-84-7

• 分子结构分类: 有机化合物 - 有机硫化合物 - 磺酰类
• 中文名称: 双(叔-丁基黄酰基)重氮甲烷
• 英文名称: bis(1,1-dimethylethylsulfonyl)diazomethane
• 英文别名: bis(tert-butylsulfonyl)diazomethane；bis(t-butylsulfonyl)diazomethane；2-[tert-butylsulfonyl(diazo)methyl]sulfonyl-2-methylpropane
• CAS: 138529-84-7
• 化学式: C₉H₁₈N₂O₄S₂
• 分子量: 282.385
• InChiKey: SAFWZKVQMVOANB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.4
• 重原子数：
  17
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  87
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20160145231A1

  公开（公告）日：2016-05-26

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

  描述了一种包含由通式（1）或（2）表示的化合物的光刻胶组合物，使用该组合物形成光刻胶图案的方法，用于该组合物的多酚化合物，以及可以由其衍生的醇化合物。
• Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
  申请人：——

  公开号：US20040167322A1

  公开（公告）日：2004-08-26

  A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

  一种化学放大型抗蚀组合物，包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷，具有许多优点，包括提高分辨率，改善焦点宽度，即使在长期PED上也减少线宽变化或形状退化，涂层、显影和剥离后减少残留物，并在显影后改善图案轮廓，因此适用于微加工。
• Pretreatment compositions
  申请人：Powell B. David

  公开号：US20060286484A1

  公开（公告）日：2006-12-21

  A pretreatment composition of: (a) at least one compound having structure VI V 1 —Y—V 2 VI wherein Y is selected from the group consisting of S, O, NR 2 , (HOCH) p , and each R 1 is independently selected from H, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group or a halogen, each R 2 is independently H, SH, CH 3 , C 2 H 5 , and a linear or branched C 1 -C 4 alkyl group containing a thiol group; and wherein V 1 and V 2 are independently selected from wherein, m is independently an integer from 0 to 4 with the proviso that m can =0 only when Y═ n is an integer from 1 to 5; p is an integer of from 1 to 4, and each R 1 is defined as above; (b) at least one organic solvent, and optionally, (c) at least one adhesion promoter; wherein the amount of the compound of Structure VI present in the composition is effective to inhibit residue from forming when the photosensitive composition is coated on a substrate and the coated substrate is processed to form an image thereon.

  预处理组合物包括：(a)至少一种具有结构VIV1—Y—V2VI的化合物，其中Y选自S、O、NR2、(HOCH)p和each R1，每个R1独立选自H、烷基、烯基、炔基、烷氧基或卤素，每个R2独立为H、SH、CH3、C2H5和含巯基的直链或支链C1-C4烷基；其中V1和V2独立选自，其中m独立为0到4的整数，条件是m只能为0当Y=n为1到5的整数；p为1到4的整数，每个R1如上定义；(b)至少一种有机溶剂，以及可选地(c)至少一种促进粘附的物质；其中，组合物中存在的结构VI化合物的量足以抑制光敏组合物涂布在基材上并在涂覆的基材上形成图像时形成残留物。
• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20170073288A1

  公开（公告）日：2017-03-16

  The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

  根据本发明，该化合物由特定的公式表示。根据本发明，该化合物具有特定公式的结构，因此可应用于湿法工艺，具有优异的耐热性和耐蚀性。此外，根据本发明，该化合物具有特定结构，因此具有高耐热性、相对较高的碳浓度、相对较低的氧浓度以及高溶剂溶解性。因此，根据本发明的化合物可用于形成在高温烘烤时降解受抑制且在氧等离子体蚀刻中具有优异耐蚀性的底层膜。此外，该化合物在与光阻层的粘附性方面也表现出色，因此可形成优异的光阻图案。
• Photoacid generators, chemically amplified resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20070292768A1

  公开（公告）日：2007-12-20

  A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

  一种光酸发生剂的化学式为（1）。包括该光酸发生剂的化学增感抗蚀组合物具有诸如高分辨率、焦点宽度、长期PED尺寸稳定性和令人满意的图案轮廓形状等优点。当该光酸发生剂与具有除了缩醛类型以外的酸敏感基团的树脂结合时，可以改善分辨率和顶部损失。该组合物适用于深紫外光刻。