Improving Memory Performances by Adjusting the Symmetry and Polarity of <i>O</i>
-Fluoroazobenzene-Based Molecules
作者:Quan Liu、Huilong Dong、Youyong Li、Hua Li、Dongyun Chen、Lihua Wang、Qingfeng Xu、Jianmei Lu
DOI:10.1002/asia.201501030
日期:2016.2
Three O‐fluoroazobenzene‐based molecules were chosen as memory‐active molecules: FAZO‐1 with a D–A2–D symmetric structure, FAZO‐2 with an A1–A2–A1 symmetric structure, and FAZO‐3 with a D–A2–A1 asymmetric structure. Both FAZO‐1 and FAZO‐2 had a lower molecular polarity, whereas FAZO‐3 had a higher polarity. The fabricated indium–tin oxide (ITO)/FAZO‐1/Al (Au) and ITO/FAZO‐2/Al (Au) memory devices both
选择了三个基于O氟偶氮苯的分子作为记忆活性分子:具有D–A2-D对称结构的FAZO-1,具有A1-A2-A1对称结构的FAZO-2和具有D–A2的FAZO-3 –A1不对称结构。既FAZO-1和FAZO-2具有较低的分子极性,而FAZO-3具有较高的极性。制成的铟锡氧化物(ITO)/ FAZO-1 / Al(Au)和ITO / FAZO-2 / Al(Au)存储器均表现出易失性静态随机存取存储器(SRAM)性能,而ITO / FAZO-3/ Al(Au)设备显示非易失性三重一次写入多次读取(WORM)行为。应当注意,这些设备的可再现性相当高,这对于存储设备中的实际应用而言是重要的。此外,确定了三种活性材料的不同记忆性能可归因于电场诱导的电荷转移复合物的稳定性。因此,可以通过调节分子极性来调节开关存储器的行为。