1-[2-羟基-3-(甲基氨基甲酰氨基)丙基]-3-甲基脲 | 33054-80-7

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机碳酸及其衍生物
• 中文名称: 1-[2-羟基-3-(甲基氨基甲酰氨基)丙基]-3-甲基脲
• 英文名称: 2-Hydroxy-1,3-bis--propan
• 英文别名: 2-Hydroxy-1,3-bis-(N'-methyl-ureido)-propan；1,1'-(2-Hydroxypropane-1,3-diyl)bis(3-methylurea)；1-[2-hydroxy-3-(methylcarbamoylamino)propyl]-3-methylurea
• CAS: 33054-80-7
• 化学式: C₇H₁₆N₄O₃
• 分子量: 204.229
• InChiKey: RFGVQIHNAUIGFL-UHFFFAOYSA-N

物化性质

• 沸点：
  583.1±45.0 °C(Predicted)
• 密度：
  1.191±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  -2.1
• 重原子数：
  14
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.71
• 拓扑面积：
  103
• 氢给体数：
  5
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  异氰酸甲酯 、 1,3-二氨基-2-羟基丙烷 生成 1-[2-羟基-3-(甲基氨基甲酰氨基)丙基]-3-甲基脲
  参考文献：
  名称：

  合成潜在的抗癌药。38. N-亚硝基脲。4.卤代乙基衍生物的进一步合成和评价。

  摘要：

  DOI：

  10.1021/jm00289a011

文献信息

• Cleaning agent for semiconductor device and cleaning method using the same
  申请人：FUJIFILM Corporation

  公开号：EP2045318A1

  公开（公告）日：2009-04-08

  The present invention provides a cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof following a chemical mechanical polishing process in a production process of a semiconductor device, including a compound represented by the following formula (I):         X1-L-X2     formula (I) wherein, in formula (I), X1 and X2 each independently represent a monovalent substituent formed by removing one hydrogen atom from a heterocycle containing at least one nitrogen atom, and L represents a divalent linking group; and provides a cleaning method using the cleaning agent.

  本发明提供了一种清洁剂，用于在半导体器件的生产过程中经过化学机械抛光工序后清洁表面有铜线的半导体器件，包括由下式(I)表示的化合物： X1-L-X2 式（I） 其中，在式(I)中，X1 和 X2 各自独立地代表通过从含有至少一个氮原子的杂环中移除一个氢原子而形成的一价取代基，L 代表二价连接基团；并提供一种使用该清洗剂的清洗方法。
• CLEANING AGENT FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD USING THE SAME
  申请人：NISHIWAKI Yoshinori

  公开号：US20090088361A1

  公开（公告）日：2009-04-02

  The present invention provides a cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof following a chemical mechanical polishing process in a production process of a semiconductor device, including a compound represented by the following formula (I): X 1 -L—X 2 formula (I) wherein, in formula (I), X 1 and X 2 each independently represent a monovalent substituent formed by removing one hydrogen atom from a heterocycle containing at least one nitrogen atom, and L represents a divalent linking group; and provides a cleaning method using the cleaning agent.
• POLISHING LIQUID FOR METAL AND POLISHING METHOD USING THE SAME
  申请人：TOMIGA Takamitsu

  公开号：US20090239380A1

  公开（公告）日：2009-09-24

  A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.
• Metal polishing slurry and chemical mechanical polishing method
  申请人：Yoshikawa Masaru

  公开号：US20100075500A1

  公开（公告）日：2010-03-25

  The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X 1 ) n -L wherein X 1 represents a heterocycle containing at least one nitrogen atom, n represents an integer of 2 or more, and L represents a linking group having a valence of 2 or more, provided that X 1 s whose number is n may be the same or different, an oxidizer and an organic acid; and a method of chemical mechanical polishing using such slurry. The metal polishing slurry and the chemical mechanical polishing method are used in chemical mechanical polishing in the step of manufacturing semiconductor devices and enable a high polishing rate to be achieved while causing minimal dishing in polishing an object (wafer).
• US9202709B2
  申请人：——

  公开号：US9202709B2

  公开（公告）日：2015-12-01