New precursors and processes are provided to generate fluorinated low dielectric constant, &egr; films that have higher dimensional stability and more rigid than fluorinated Poly (Para-Xylylenes). The low &egr; films are prepared primarily from polymerization of precursors consisting of both benzocyclobutane and unsaturated carbon-carbon groups such as vinyl (C═C) and ethylenic groups. The low &egr; polymers consists primarily of SP
2
C—F, hyperconjugated Sp
3
C
&agr;
—F type or/and Sp
3
Si
&agr;
—F fluorine. The low &egr; (<2.4) films are useful for fabrications of future<0.18 &mgr;m ICs. Using low &egr; films prepared according to this invention, the integrity of dielectric, Cu and its barrier metals such as Ta can be kept intact; therefore reliability of these ICs can be assured.
提供了新的前体和工艺来生成
氟化低介电常数&egr;薄膜,这种薄膜比
氟化聚
对二甲苯(Para-Xylylenes)具有更高的尺寸稳定性和刚性。低介电常数薄膜主要由苯并
环丁烷和不饱和碳-碳基团(如
乙烯基(C═C)和
乙烯基)组成的前体聚合制备而成。低 &egr; 聚合物主要由
SP
2
C-F、超共轭
SP
3
C
&agr;
-F型或/和
SP
3
Si
&agr;
-F
氟。低&egr;(<2.4)薄膜有助于制造未来的<0.18&mgr;m集成电路。使用根据本发明制备的低 &egr; 薄膜,可以保持电介质、铜及其阻挡
金属(如 Ta)的完整性,因此可以确保这些集成电路的可靠性。