Contributions to the chemistry of silicon-sulphur compounds
作者:B. Becker、W. Wojnowski
DOI:10.1016/0022-328x(88)80128-1
日期:1988.6
(Me2Si)x react with elemental sulphur at 190–200°C much slowly than (Me2Si)5. Reaction of 1 gives initially the insertion product (Me2Si)6S, and hence (Me2Si)5S, (Me2Si)4S2, and finally hexamethyl-1,3-dithiacyclopentasilane, (Me2SiS)3, and (Me2SiS)2. These last three products are also formed in the reaction of sulphur with the linear polymer. The mechanism of sulphur insertion into the polysilane molecule
Group VI permethylheterocyclopolysilanes (SiMe2)n X with n = 4,5,6 and X O, S, Se have been synthesized from α,ω-dichloropolysilanes and Li2S/Li2Se or by simple hydrolysis. From UV spectroscopic results considerable contributions of the heteroatom lone pair electrons to low-energy electron transitions can be derived. SiSi NMR coupling constants satisfactorily correlate with heteroatom electronegativities
通过α,ω-二氯聚硅烷和Li 2 S / Li 2 Se或通过简单水解合成了n = 4,5,6的VI组全甲基杂环聚硅烷(SiMe 2)n X和X = O,S,Se 。从紫外光谱结果可以得出杂原子孤对电子对低能电子跃迁的相当大的贡献。SiSiNMR耦合常数与杂原子电负性令人满意地相关,表明占主导地位的费米接触对相应耦合常数的大小有贡献。