dialkylaminosilanes a number of newrearrangements was observed. When acted upon by ketene, dialkylaminosilanes, depending on the conditions applied, produce either amides of β-siloxyvinylacetic acid (I) (route “a”, scheme A) or amides of silylated aceticacid (II) (routes “b”, “c”). In both cases an intermediate α-siloxyvinyldialkylamine (III) was isolated which may be rearranged to give amide (II).
The [RuHCl(CO)(PCy3)2]-catalyzed N-silylation of primary and secondary amines with substituted vinylsilanes leads to the formation of a Si–N bond with the evolution of olefin.
[EN] ORGANOMETALLIC COMPOUND AND METHOD<br/>[FR] COMPOSÉ ORGANOMÉTALLIQUE ET PROCÉDÉ
申请人:SEASTAR CHEMICALS INC
公开号:WO2017136945A1
公开(公告)日:2017-08-17
A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of -NR1R2, -N(R4)(CH2)nN(R5R6), -N=C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer deposition (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Methods of low temperature vapour phase deposition of metal oxide films, such as SiO2 films, are also provided.