Bis(stannyl)phosphanyl‐Substituted Dichlorosilanes/Germanes — Potential Precursors for a Novel Strategy Toward P–Si/Ge Multiple Bonds?
作者:Marion Bender、Edgar Niecke、Martin Nieger、Rudolf Pietschnig
DOI:10.1002/ejic.200500646
日期:2006.1
A general synthetic route to bis(stannyl)phosphanyl-substituted dichlorosilanes/germanes of the type R–SiCl2–P(SnMe3)2 and R–GeCl2–P(SnMe3)2 is reported. For R = Cp* (= 1,2,3,4,5-pentamethylcyclopentadienyl) crystal structures for the corresponding silane and germane could be obtained. These compounds are the first structurally characterized bis(stannyl)phosphanyl-substituted dichlorosilanes/germanes
报道了 R–SiCl2–P(SnMe3)2 和 R–GeCl2–P(SnMe3)2 类型的双(甲锡烷基)膦酰基取代的二氯硅烷/锗烷的一般合成路线。对于 R = Cp* (= 1,2,3,4,5-五甲基环戊二烯基),可以获得相应硅烷和锗烷的晶体结构。这些化合物是第一个结构表征的双(甲锡烷基)膦酰基取代的二氯硅烷/锗烷,由于它们的功能性,它们应该是生成不饱和 PSi 和 PGe 单元以及可能的磷硅烷和磷锗烷的理想前体。(© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2006)