The invention relates to a process for the manufacture of monosilanes of formula (I): MexSiHyClz (I), comprising: the step of subjecting a silane substrate (methyldisilanes, methyloligosilanes, or carbodisilanes) to a cleavage reaction of the silicon-silicon bond(s) or the silicon- carbon bonds in silane substrates the reaction involving a cleavage compound selected from a quaternary Group 15 onium compound R4 QX, a heterocyclic amine, a heterocyclic ammonium halide, or a mixture of R3P and RX. The starting material disilanes to be cleaved has the formula (II): MemSi2HnClo (II) The starting material oligosilanes to be cleaved have the general formula (III): MepSiqHrCIs (II I), The starting material carbodisilanes to be cleaved have the general formula (IV): (MeaSiHbCle)-CH2-(MecSiHdClf) (IV)
本发明涉及一种制备式(I)的单
硅烷的过程:MexSiHyClz (I),包括以下步骤:将
硅烷底物(甲基二
硅烷、甲基寡
硅烷或碳二
硅烷)经过
硅-
硅键或
硅-碳键的断裂反应,反应涉及选择自第15族季
铵化合物R4QX、杂环胺、杂环
铵卤化物或R3P和RX混合物的断裂化合物。待裂解的起始材料二
硅烷的
化学式为(II):MemSi2HnClo (II)。待裂解的起始材料寡
硅烷的通式为(III):MepSiqHrCIs (III)。待裂解的起始材料碳二
硅烷的通式为(IV):(MeaSiHbCle)-
CH2-(MecSiHdClf) (IV)。