2-羟基甲基-N,N-二甲基哌啶鎓 | 7013-15-2

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 哌啶类
• 中文名称: 2-羟基甲基-N,N-二甲基哌啶鎓
• 英文名称: 2-Hydroxymethyl-N,N-dimethylpiperidinium
• 英文别名: (1,1-dimethylpiperidin-1-ium-2-yl)methanol
• CAS: 7013-15-2
• 化学式: C8H18NO+
• 分子量: 144.23
• InChiKey: XXHOPWXOMRJTTH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.5
• 重原子数：
  10
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• [EN] ECHINOCANDIN ANALOGUES AND PREPARATION METHOD THEREFOR<br/>[FR] ANALOGUES D'ÉCHINOCANDINE ET LEUR PROCÉDÉ DE PRÉPARATION<br/>[ZH] 棘白菌素类似物及其制备方法
  申请人：SHANGHAI SENHUI MEDICINE CO LTD

  公开号：WO2021110125A1

  公开（公告）日：2021-06-10

  涉及棘白菌素类似物及其制备方法，该类化合物可用于预防或者治疗真菌感染，或者用于预防、稳定或抑制真菌生长或杀死真菌，示例化合物如式I所示，其中R 1、R 2、R 3及G基团的定义如说明书中所述。
• ACETYL CHOLINE ESTERASE INHIBITORS FOR TREATING AND DIAGNOSING SLEEP DISORDERED BREATHING
  申请人：Curapath AB

  公开号：EP0923370B1

  公开（公告）日：2005-11-16
• PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160041465A1

  公开（公告）日：2016-02-11

  The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
• RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170075224A1

  公开（公告）日：2017-03-16

  A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
• US6034117A
  申请人：——

  公开号：US6034117A

  公开（公告）日：2000-03-07