hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) bis(trimethylsiloxide) | 873873-21-3

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) bis(trimethylsiloxide)
• 英文别名: Hf(OSiMe3)2(thd)2
• CAS: 873873-21-3；332029-44-4
• 化学式: C₂₈H₅₆HfO₆Si₂
• 分子量: 723.41
• InChiKey: NRBZXMVSBLCXOY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  None
• 重原子数：
  None
• 可旋转键数：
  None
• 环数：
  None
• sp3杂化的碳原子比例：
  None
• 拓扑面积：
  None
• 氢给体数：
  None
• 氢受体数：
  None

反应信息

• 作为反应物：
  描述：

  hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) bis(trimethylsiloxide) 在 O₂ 作用下， 以 甲苯 为溶剂， 生成
  参考文献：
  名称：

  Synthesis and characterisation of Hf(thd)2X2 derivatives [X=N(SiMe3)2, OSiMe3 and OSitBuMe2] as precursors for MOCVD of hafnium silicate films

  摘要：

  Hafnium beta-diketonatochlorides HfCl2(thd)(2) (1), HfCl(thd)(3) (2) as well as beta-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)(2)[N(SiMe3)(2)](2) (3), Hf(thd)(2)(OSiMe3)(2) (4) and Hf(thd)(2)(OSi'BuMe2)(2) (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, H-1 NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSixOy films by pulsed liquid injection MOCVD on Si(I 00) and R plane sapphire. The as-deposited at 600-800 degrees C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7-0.85) and smooth. (c) 2005 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2005.06.036
• 作为产物：
  描述：

  hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) chloride 、 lithium trimethylsilanolate 以 甲苯 为溶剂， 以69%的产率得到hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) bis(trimethylsiloxide)
  参考文献：
  名称：

  Synthesis and characterisation of Hf(thd)2X2 derivatives [X=N(SiMe3)2, OSiMe3 and OSitBuMe2] as precursors for MOCVD of hafnium silicate films

  摘要：

  Hafnium beta-diketonatochlorides HfCl2(thd)(2) (1), HfCl(thd)(3) (2) as well as beta-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)(2)[N(SiMe3)(2)](2) (3), Hf(thd)(2)(OSiMe3)(2) (4) and Hf(thd)(2)(OSi'BuMe2)(2) (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, H-1 NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSixOy films by pulsed liquid injection MOCVD on Si(I 00) and R plane sapphire. The as-deposited at 600-800 degrees C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7-0.85) and smooth. (c) 2005 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2005.06.036