hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) chloride | 472968-72-2

• 英文名称: hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) chloride
• 英文别名: HfCl2(thd)2
• CAS: 472968-72-2
• 化学式: C₂₂H₃₈Cl₂HfO₄
• 分子量: 615.937
• InChiKey: YQJBDSGFIGCGAM-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
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• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
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• 拓扑面积：
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• 氢给体数：
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• 氢受体数：
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反应信息

• 作为反应物：
  描述：

  叔丁基二甲基硅烷醇 、 hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) chloride 以 甲苯 为溶剂， 以99%的产率得到hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) bis(t-butyldimethylsiloxide)
  参考文献：
  名称：

  Synthesis and characterisation of Hf(thd)2X2 derivatives [X=N(SiMe3)2, OSiMe3 and OSitBuMe2] as precursors for MOCVD of hafnium silicate films

  摘要：

  Hafnium beta-diketonatochlorides HfCl2(thd)(2) (1), HfCl(thd)(3) (2) as well as beta-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)(2)[N(SiMe3)(2)](2) (3), Hf(thd)(2)(OSiMe3)(2) (4) and Hf(thd)(2)(OSi'BuMe2)(2) (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, H-1 NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSixOy films by pulsed liquid injection MOCVD on Si(I 00) and R plane sapphire. The as-deposited at 600-800 degrees C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7-0.85) and smooth. (c) 2005 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2005.06.036
• 作为产物：
  描述：

  2,2,6,6-四甲基-3,5-庚二酮 、 氯化铪 以 甲苯 为溶剂， 以84%的产率得到hafnium bis(2,2,6,6-tetramethyl-3,5-heptanedionato) chloride
  参考文献：
  名称：

  Synthesis and characterisation of Hf(thd)2X2 derivatives [X=N(SiMe3)2, OSiMe3 and OSitBuMe2] as precursors for MOCVD of hafnium silicate films

  摘要：

  Hafnium beta-diketonatochlorides HfCl2(thd)(2) (1), HfCl(thd)(3) (2) as well as beta-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)(2)[N(SiMe3)(2)](2) (3), Hf(thd)(2)(OSiMe3)(2) (4) and Hf(thd)(2)(OSi'BuMe2)(2) (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, H-1 NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSixOy films by pulsed liquid injection MOCVD on Si(I 00) and R plane sapphire. The as-deposited at 600-800 degrees C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7-0.85) and smooth. (c) 2005 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2005.06.036