Synthesis of damnacanthal, a naturally occurring 9,10-anthraquinone and its analogues, and its biological evaluation against five cancer cell lines
摘要:
Damnacanthal and nordamnacanthal, two naturally occurring 9,10-anthraquinones, and their analogues were synthesized. Cytotoxic activity against five cancer cell lines was evaluated using MTT assay. 2-Bromomethyl-1,3-dimethoxyanthraquinone was found to display the highest activity against all cell lines with IC50 range of 2-8 mu M. Structure-activity relationship (SAR) assessment was considered to rationalise the cytotoxic effect. Bromomethyl group at position C-2 of the anthraquinone was found to be important in exerting cytotoxic activity of this class of compounds. The presence of the flanking methoxyl or hydroxyl groups at C-1 and C-3 also contributes to this activity. Finally, the antioxidant effect of these compounds was evaluated. MTT assay was used to measure the cytotoxicity against different cancer cell lines. Antioxidant activity was measured by FTC and TBA methods. Only two anthraquinones, damnacanthal and nordamnacanthal, were found to be antioxidative.
Photoresist underlayer film-forming composition and pattern forming process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2813889A2
公开(公告)日:2014-12-17
In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.
Underlayer film-forming composition and pattern forming process
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US10228621B2
公开(公告)日:2019-03-12
In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.
UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20140363955A1
公开(公告)日:2014-12-11
In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO
2
substrates.