2,3-dimethylpentacene-6,13-dione | 758706-00-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 并五苯醌
• 英文名称: 2,3-dimethylpentacene-6,13-dione
• CAS: 758706-00-2
• 化学式: C₂₄H₁₆O₂
• 分子量: 336.39
• InChiKey: KKGVAABRJOLPGH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.1
• 重原子数：
  26
• 可旋转键数：
  0
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.08
• 拓扑面积：
  34.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2,3-dimethylpentacene-6,13-dione 在 lithium aluminium tetrahydride 作用下， 以 四氢呋喃 为溶剂， 以75%的产率得到2,3-dimethylpentacene
  参考文献：
  名称：

  Organic Thin Film Transistors Based on 2,3-Dimethylpentacene and 2,3-Dimethyltetracene

  摘要：

  Abstract2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO2/Si surface. Thin film transistors prepared on SiO2/Si and n‐nonyltrichlorosilane‐modified SiO2/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO2/Si substrate gave the highest field‐effect mobility of 0.46 cm2/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm2/Vs.

  DOI：

  10.1002/jccs.201200383
• 作为产物：
  描述：

  4,5-二甲基苯-1,2-二甲醇 在 氢溴酸 、 potassium iodide 作用下， 以 N,N-二甲基甲酰胺 为溶剂， 反应 52.0h， 生成 2,3-dimethylpentacene-6,13-dione
  参考文献：
  名称：

  Organic Thin Film Transistors Based on 2,3-Dimethylpentacene and 2,3-Dimethyltetracene

  摘要：

  Abstract2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO2/Si surface. Thin film transistors prepared on SiO2/Si and n‐nonyltrichlorosilane‐modified SiO2/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO2/Si substrate gave the highest field‐effect mobility of 0.46 cm2/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm2/Vs.

  DOI：

  10.1002/jccs.201200383

文献信息

• Polyacene and Semiconductor Formulation
  申请人：Anemian Remi Manouk

  公开号：US20080191199A1

  公开（公告）日：2008-08-14

  The invention relates to novel polyacene compounds, organic semiconducting formulations and layers comprising them, a process for preparing the formulation and layer and electronic devices, including organic field effect transistors (OFETs), comprising the same.

  本发明涉及新型聚芴化合物、含有它们的有机半导体配方和层、制备配方和层的过程以及包括它们的电子设备，包括有机场效应晶体管（OFETs）。
• THIN FILM OF CONDENSED POLYCYCLC AROMATIC COMPOUND, AND METHOD FOR PREPARING THIN FILM OF CONDENSED POLYCYCLC AROMATIC COMPOUND
  申请人：Asahi Kasei Kabushiki Kaisha, Ltd.

  公开号：EP1724028A1

  公开（公告）日：2006-11-22

  An organic semiconductor thin film exhibiting high mobility and a method for preparing the same, and a material for preparing the organic semiconductor thin film by a wet process and a method for preparing the same are provided. Further, an organic semiconductor device excellent in electronic characteristics is provided. A mixture of high purity pentacene and 1,2,4-trichlorobenzene was heated to prepare a homogeneous solution, and a silicon substrate having a pattern of a gold electrode as a source/drain electrode formed thereon was heated to 100°C and the resultant pentacene solution was spread on the surface of the substrate. When 1,2,4-trichlorobenzene was evaporated, a pentacene thin film was formed. A transistor was formed with the use of the thin film.

  提供了一种具有高迁移率的有机半导体薄膜及其制备方法，以及一种通过湿法工艺制备该有机半导体薄膜的材料及其制备方法。此外，还提供了一种电子特性优异的有机半导体器件。将高纯度的并五苯和 1,2,4-三氯苯的混合物加热以制备均匀的溶液，然后将硅衬底加热至 100°C，并在其上形成以金电极作为源极/漏极的图案，然后将得到的并五苯溶液涂抹在衬底表面。当 1,2,4-三氯苯蒸发后，就形成了五碳烯薄膜。利用该薄膜形成了一个晶体管。
• Polyacene and semiconductor Formulation
  申请人：Merck Patent GmbH

  公开号：EP1986247A1

  公开（公告）日：2008-10-29

  The invention relates to novel polyacene compounds, organic semiconducting formulations and layers comprising them, a process for preparing the formulation and layer and electronic devices, including organic field effect transistors (OFETs), comprising the same.

  本发明涉及新型多烯化合物、包含它们的有机半导体配方和层、制备配方和层的工艺以及包含它们的电子器件，包括有机场效应晶体管（OFET）。
• METHOD FOR PREPARING THIN FILM OF CONDENSED POLYCYCLC AROMATIC COMPOUND
  申请人：Asahi Kasei Kabushiki Kaisha

  公开号：EP1724028B1

  公开（公告）日：2012-02-29
• POLYACENE AND SEMICONDUCTOR FORMULATION
  申请人：Merck Patent GmbH

  公开号：EP1880429A1

  公开（公告）日：2008-01-23