FORMULATIONS OF SOLUTIONS AND PROCESSES FOR FORMING A SUBSTRATE INCLUDING AN ARSENIC DOPANT
申请人:DYNALOY, LLC
公开号:US20140124896A1
公开(公告)日:2014-05-08
Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.
描述了形成包括掺杂剂的基板的解决方案和过程的配方。在特定实施方案中,掺杂剂可能包括砷(As)。在一个实施例中,提供了一种包括溶剂和掺杂剂的掺杂剂溶液。在一个特定实施例中,掺杂剂溶液可能具有至少大致等于能够导致基板表面的原子附着到掺杂剂溶液中含砷化合物的最低温度的闪点。在一个实施例中,基板表面的硅原子数量与含砷化合物共价结合。