1,3-Didecyltetramethyldisilazane | 82356-81-8

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: 1,3-Didecyltetramethyldisilazane
• 英文别名: 1-[[[decyl(dimethyl)silyl]amino]-dimethylsilyl]decane
• CAS: 82356-81-8
• 化学式: C₂₄H₅₅NSi₂
• 分子量: 413.9
• InChiKey: CAHMDKGTEUVXJQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  9.27
• 重原子数：
  27
• 可旋转键数：
  20
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  12
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  1,3-Didecyltetramethyldisilazane 、 三氟甲磺酸酐 生成 Decyldimethylsilyl trifluoromethanesulfonate
  参考文献：
  名称：

  Liquid chemical for forming protecting film

  摘要：

  本发明涉及一种液体化学品，用于在清洗具有表面微细不均匀图案并且至少包含硅的不均匀图案的晶片时，在凹陷部分的表面上形成防水保护膜。该液体化学品包含一种由通式表示的硅化合物A：R1aSi(H)bX4-a-b和一种酸A，其中酸A至少选自以下组 consisting of trimethylsilyl trifluoroactate，trimethylsilyl trifluoromethanesulfonate，dimethylsilyl trifluoroactate，dimethylsilyl trifluoromethanesulfonate，butyldimethylsilyl trifluoroactate，butyldimethylsilyl trifluoromethanesulfonate，hexyldimethylsilyl trifluoroacetate，hexyldimethylsilyl trifluoromethanesulfonate，octyldimethylsilyl trifluoroactate，octyldimethylsilyl trifluoromethanesulfonate，decyldimethylsilyl trifluoroacetate和decyldimethylsilyl trifluoromethanesulfonate。

  公开号：

  US09228120B2

文献信息

• PROCESS FOR CLEANING WAFERS
  申请人：KUMON Soichi

  公开号：US20120211025A1

  公开（公告）日：2012-08-23

  A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

  一种清洗具有不平整表面的晶圆的方法。该方法至少包括以下步骤：使用清洗液清洗晶圆；在清洗后，用一种防水液体化学物质替换晶圆凹陷部分中保留的清洗液；并将晶圆干燥，其中，清洗液含有80质量%或更多沸点在55至200℃之间的溶剂，替换步骤中提供的防水液体化学物质的温度不低于40℃且低于防水液体化学物质的沸点，从而至少赋予凹陷部分表面防水性。
• Liquid Chemical for Forming Protecting Film
  申请人：KUMON Soichi

  公开号：US20120017934A1

  公开（公告）日：2012-01-26

  Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R 1 a Si(H) b X 4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

  本发明涉及一种液体化学品，用于在清洗具有表面细微不平整图案并且至少包含硅不平整图案的晶圆时，在凹陷部分的表面上形成防水保护膜。该液体化学品包含一种由通式表示的硅化合物A：R1aSi(H)bX4-a-b和一种酸A，其中酸A至少选择自甲基三氟乙酸基硅烷、甲基三氟甲烷磺酸基硅烷、二甲基三氟乙酸基硅烷、二甲基三氟甲烷磺酸基硅烷、丁基二甲基硅烷三氟乙酸酯、丁基二甲基硅烷三氟甲烷磺酸酯、己基二甲基硅烷三氟乙酸酯、己基二甲基硅烷三氟甲烷磺酸酯、辛基二甲基硅烷三氟乙酸酯、辛基二甲基硅烷三氟甲烷磺酸酯、十基二甲基硅烷三氟乙酸酯和十基二甲基硅烷三氟甲烷磺酸酯组成的群体中至少选取一种。
• Process for cleaning wafers
  申请人：Kumon Soichi

  公开号：US08828144B2

  公开（公告）日：2014-09-09

  A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

  一种清洗表面不平的晶片的方法。该方法至少包括以下步骤：使用清洗液清洗晶片；在清洗后，用一种防水液体化学品替换晶片凹陷部分中保留的清洗液；并使晶片干燥，其中清洗液含有80质量%或更多的沸点为55到200°C的溶剂，供应于替换步骤中的防水液体化学品的温度不低于40°C，低于防水液体化学品的沸点，从而至少使凹陷部分的表面具有防水性。