dimethylbis(trimethylsilyl)germane | 134847-63-5

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: dimethylbis(trimethylsilyl)germane
• CAS: 134847-63-5
• 化学式: C₈H₂₄GeSi₂
• 分子量: 249.04
• InChiKey: GCQRUQFDYJGGBG-UHFFFAOYSA-N

物化性质

• 沸点：
  182.0±23.0 °C(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.53
• 重原子数：
  11.0
• 可旋转键数：
  2.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  dimethylbis(trimethylsilyl)germane 、 四氯化锡 以 硝基甲烷 为溶剂， 以60%的产率得到chloro(methyl)bis(trimethylsilyl)germane
  参考文献：
  名称：

  新的光化学途径生成亚甲基苯和二烯的过程以及有关亚甲基二烯加成机理的动力学证据

  摘要：

  Upon 254-nm irradiation of phenylbis(trimethylsilyl)germanes, there is competition between two germylene-forming reactions, the unexpected elimination of phenyltrimethylsilane and the elimination of hexamethyldisilane. Irradiation of a phenylmonosilylgermane PhGeMe2SiMe3 leads to predominant elimination of PhSiMe3, forming dimethylgermylene Me2Ge:, accompanied by migration of Me3Si to the ortho position of the phenyl ring, forming a germene. Laser flash photolysis of PhGeMe2SiMe3 is a convenient source of Me3Ge:, and rate constants are reported for Me2Ge: addition to a series of dienes and other substrates. The kinetic data are in accord with 1,2-addition as the dominant pathway for addition of Me2Ge: to 1,3-dienes.

  DOI：

  10.1021/om00054a046
• 作为产物：
  描述：

  三甲基氯硅烷 、 lithium 、 二氯二甲基锗 以 四氢呋喃 为溶剂， 以28%的产率得到dimethylbis(trimethylsilyl)germane
  参考文献：
  名称：

  新的光化学途径生成亚甲基苯和二烯的过程以及有关亚甲基二烯加成机理的动力学证据

  摘要：

  Upon 254-nm irradiation of phenylbis(trimethylsilyl)germanes, there is competition between two germylene-forming reactions, the unexpected elimination of phenyltrimethylsilane and the elimination of hexamethyldisilane. Irradiation of a phenylmonosilylgermane PhGeMe2SiMe3 leads to predominant elimination of PhSiMe3, forming dimethylgermylene Me2Ge:, accompanied by migration of Me3Si to the ortho position of the phenyl ring, forming a germene. Laser flash photolysis of PhGeMe2SiMe3 is a convenient source of Me3Ge:, and rate constants are reported for Me2Ge: addition to a series of dienes and other substrates. The kinetic data are in accord with 1,2-addition as the dominant pathway for addition of Me2Ge: to 1,3-dienes.

  DOI：

  10.1021/om00054a046

文献信息

• New photochemical routes to germylenes and germenes and kinetic evidence concerning the germylene-diene addition mechanism
  作者：Kevin L. Bobbitt、Vincent M. Maloney、Peter P. Gaspar

  DOI：10.1021/om00054a046

  日期：1991.8

  Upon 254-nm irradiation of phenylbis(trimethylsilyl)germanes, there is competition between two germylene-forming reactions, the unexpected elimination of phenyltrimethylsilane and the elimination of hexamethyldisilane. Irradiation of a phenylmonosilylgermane PhGeMe2SiMe3 leads to predominant elimination of PhSiMe3, forming dimethylgermylene Me2Ge:, accompanied by migration of Me3Si to the ortho position of the phenyl ring, forming a germene. Laser flash photolysis of PhGeMe2SiMe3 is a convenient source of Me3Ge:, and rate constants are reported for Me2Ge: addition to a series of dienes and other substrates. The kinetic data are in accord with 1,2-addition as the dominant pathway for addition of Me2Ge: to 1,3-dienes.