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| 51923-68-3

中文名称
——
中文别名
——
英文名称
——
英文别名
——
化学式
CAS
51923-68-3
化学式
C8H20GeN2
mdl
——
分子量
216.85
InChiKey
ZEZICNKIICWLBD-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.2
  • 重原子数:
    11
  • 可旋转键数:
    6
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    6.5
  • 氢给体数:
    0
  • 氢受体数:
    2

反应信息

  • 作为产物:
    描述:
    二乙胺 、 alkaline earth salt of/the/ methylsulfuric acid 在 甲基锂 作用下, 以 乙醚 为溶剂, 反应 3.0h, 以71%的产率得到
    参考文献:
    名称:
    The synthesis, characterization and DFT calculations of highly volatile aminogermylene precursors and thin film investigation for CVD/ALD technology
    摘要:
    Compared to the difficult volatilization for germanium (IV) precursors, germanium (II) precursors usually have better volatilization but difficult to synthesize. A series of diamine germanium (II) precursors were synthesized, characterized and investigated by DFT calculations. These germanium (II) precursors were tested by TG experiments and showed excellent volatilization, which were suitable as a potential membrane material. Moreover, the Ge film was deposited on Si wafer directly and characterized by SEM. (C) 2015 Elsevier B.V. All rights reserved.
    DOI:
    10.1016/j.inoche.2015.01.008
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文献信息

  • The synthesis, characterization and DFT calculations of highly volatile aminogermylene precursors and thin film investigation for CVD/ALD technology
    作者:Quan Wang、Sannian Song、Zhitang Song、Dawei Wang、Yuqiang Ding
    DOI:10.1016/j.inoche.2015.01.008
    日期:2015.3
    Compared to the difficult volatilization for germanium (IV) precursors, germanium (II) precursors usually have better volatilization but difficult to synthesize. A series of diamine germanium (II) precursors were synthesized, characterized and investigated by DFT calculations. These germanium (II) precursors were tested by TG experiments and showed excellent volatilization, which were suitable as a potential membrane material. Moreover, the Ge film was deposited on Si wafer directly and characterized by SEM. (C) 2015 Elsevier B.V. All rights reserved.
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