中文名称 | 英文名称 | CAS号 | 化学式 | 分子量 |
---|---|---|---|---|
—— | ethynyltris((trimethylsilyl)ethynyl)silane | 954371-86-9 | C17H28Si4 | 344.751 |
Alkynylsilanes bearing one to four alkynyl groups at silicon, with organyl groups (Me, Ph, Vin), H, Cl at silicon, and with substituents H, nBu, tBu, Ph, C6H4-4-Me, 3-thienyl, CH2NMe2 at the C≡C bond, were prepared, and their 13C and 29Si NMR data are reported. The results of X-ray structure analyses of three representative derivatives [di(phenylethynyl)dimethylsilane, di(phenylethynyl) methyl(phenyl)silane, and tri(phenylethynyl)methylsilane] are presented. The chemistry of mono- and dialkynylsilanes was further developed to prepare compounds with alternating Si atoms and C≡C bonds, affording new dialkynylsilanes as well as numerous new vinylsilanes which have also been characterized by 13C and 29Si NMR spectroscopy in solution. In the case of ethynyl(triphenylsilylethynyl) dimethylsilane, the molecular structure was determined by X-ray diffraction.
The tetrakis(trimethylsilyl)ethynyl derivatives of Si, Ge, Sn, and Pb were prepared and examined spectroscopically. NMR and Mössbauer spectroscopy and X-ray crystal structure data clearly demonstrate an electronic interaction in the ground state between the distal SiMe3 groups and the central metal atom, leading to a strong shielding of the central metal atom; the respective nmr signals of the central metal are among the most shielded examples reported for a tetrahedral Group 14 metal centre with four carbon ligands. The nature of these electronic interactions is discussed.