ORGANIC SILANE COMPOUND FOR FORMING SI-CONTAINING FILM BY PLASMA CVD AND METHOD FOR FORMING SI-CONTAINING FILM
申请人:Hamada Yoshitaka
公开号:US20100137626A1
公开(公告)日:2010-06-03
An organic silane compound for forming a Si-containing film by plasma CVD is provided. The silane compound contains 2 or more silicon atoms bonded by an intervening straight chain or branched oxygen-containing hydrocarbon chain having 4 to 8 carbon atoms containing a bond represented by C
p
—O—C
q
wherein p and q independently represent number of carbon atoms with the proviso that 2≦p≦6 and 2≦q≦6 and the carbon chains do not contain an unsaturated bond which conjugates with the oxygen atom, wherein all of the 2 or more silicon atoms has 1 or more hydrogen atom or an alkoxy group having 1 to 4 carbon atoms.