Si-containing film forming compositions are disclosed comprising Si-N containing precursors. Also disclosed are methods of synthesizing the same and methods of using the same for vapor deposition. In particular, a catalytic dehydrogenative coupling of carbosilanes with ammonia, amines and amidines produces the Si-N containing precursors.
本发明揭示了包含Si-N前体物的Si含量薄膜形成组合物。还揭示了合成这些组合物的方法以及将其用于蒸汽沉积的方法。特别地,通过使用
氨、胺和酰胺与碳
硅烷的催化脱氢偶联反应可以产生Si-N前体物。