N-[difluoro-[4-(2,2,2-trifluoroethyl)piperazin-1-yl]sulfonylmethyl]sulfonyl-1,1,1-trifluoromethanesulfonamide

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 二嗪烷类
• 英文名称: N-[difluoro-[4-(2,2,2-trifluoroethyl)piperazin-1-yl]sulfonylmethyl]sulfonyl-1,1,1-trifluoromethanesulfonamide
• 化学式: C₈H₁₁F₈N₃O₆S₃
• 分子量: 493.4
• InChiKey: LWPRYHADCUWXLX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.2
• 重原子数：
  28
• 可旋转键数：
  6
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  146
• 氢给体数：
  1
• 氢受体数：
  17

文献信息

• Rinsing liquid, pattern forming method, and electronic device manufacturing method
  申请人：FUJIFILM Corporation

  公开号：US10599038B2

  公开（公告）日：2020-03-24

  Provided are a rinsing liquid which is used for rinsing a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition and includes a hydrocarbon-based solvent having a branched alkyl group. The hydrocarbon-based solvent having a branched alkyl group contains at least one of isodecane or isododecane.

  本发明提供了一种漂洗液，它用于漂洗从对放 射线敏感或对辐射敏感的组合物中获得的抗蚀剂薄膜，其中包括一种具有支链烷基的烃基溶 剂。具有支链烷基的烃基溶剂至少包含异癸烷或异十二烷中的一种。
• Treatment liquid and pattern forming method
  申请人：FUJIFILM Corporation

  公开号：US11042094B2

  公开（公告）日：2021-06-22

  An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more.

  本发明的目的是提供一种用于抗蚀剂薄膜图案化的处理液和一种图案形成方法，每种处理液和方法都能同时抑制抗蚀剂 L/S 图案崩溃和抗蚀剂 C/H 图案遗漏故障的发生。 本发明的处理液是一种用于抗蚀剂薄膜图案化的处理液，它用于将从对放 射线敏感或对辐射敏感的树脂组合物中获得的抗蚀剂薄膜进行显影或洗涤中的 至少一种处理，并含有一种有机溶剂，其中处理液含有相对介电常数为 4.0 或以下 的第一种有机溶剂和相对介电常数为 6.0 或以上的第二种有机溶剂。
• Treatment liquid and treatment liquid housing body
  申请人：FUJIFILM Corporation

  公开号：US11175585B2

  公开（公告）日：2021-11-16

  An object of the present invention is to provide a treatment liquid which is capable of suppressing the generation of defects of a semiconductor device and has excellent corrosion resistance and wettability. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, containing at least one organic solvent selected from the group consisting of ethers, ketones, and lactones, water, and a metal component including at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, in which the content of water in the treatment liquid is 100 ppb by mass to 100 ppm by mass and the content of the metal component in the treatment liquid is 10 ppq by mass to 10 ppb by mass.

  本发明的目的是提供一种处理液，它能够抑制半导体器件缺陷的产生，并具有优异的耐腐蚀性和润湿性。本发明的处理液是一种用于半导体器件的处理液，含有至少一种选自由醚、酮和内酯组成的组的有机溶剂、水和金属成分，其中金属成分包括至少一种选自由 Na、K、Ca、Fe、Cu、Mg、Mn、Li、Al、Cr、Ni、Ti 和 Zn 所组成的组中的至少一种金属元素，其中处理液中水的含量为 100 ppb（质量分数）至 100 ppm（质量分数），处理液中金属成分的含量为 10 ppq（质量分数）至 10 ppb（质量分数）。
• Treatment liquid for manufacturing semiconductor and pattern forming method
  申请人：FUJIFILM Corporation

  公开号：US11256173B2

  公开（公告）日：2022-02-22

  An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

  本发明的目的是提供一种用于制造半导体的处理液和一种图案形成方法，在这种处理液和方法中，可以减少包括金属原子在内的颗粒的形成，并且可以形成极好的图案。 根据本发明的一个实施方案，用于制造半导体的处理液包括：由式（N）表示的季铵盐化合物；至少一种添加剂，该添加剂选自由阴离子表面活性剂、非离子表面活性剂、阳离子表面活性剂和螯合剂组成的组；以及水。用于制造半导体的处理液包括一种或两种以上选自 Na、K、Ca、Fe、Cu、Mg、Mn、Li、Al、Cr、Ni 和 Zn 组的金属原子，且金属原子的总质量相对于添加剂总质量和金属原子总质量之和为 1 质量 ppt 至 1 质量 ppm。
• ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：EP3521926B1

  公开（公告）日：2021-04-21