N,N,N,N,N,N-hexaethylphosphinetricarboxamide

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机碳酸及其衍生物
• 英文名称: N,N,N,N,N,N-hexaethylphosphinetricarboxamide
• 英文别名: 1-[bis(diethylcarbamoyl)phosphanyl]-N,N-diethylformamide
• 化学式: C₁₅H₃₀N₃O₃P
• 分子量: 331.39
• InChiKey: JNDPTHRENWPPDI-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.5
• 重原子数：
  22
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  60.9
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• Use of heteroleptic indium hydroxides as precursors for INP nanocrystals
  申请人：NANOSYS, Inc.

  公开号：US10029972B2

  公开（公告）日：2018-07-24

  The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.

  本发明属于纳米结构合成领域。本发明涉及生产纳米结构，特别是 III-V 族半导体纳米结构的方法。本发明还涉及制备可用作纳米结构合成前体的 III 族无机化合物。
• Process for group III-V semiconductor nanostructure synthesis and compositions made using same
  申请人：NANOSYS, Inc.

  公开号：US10266409B1

  公开（公告）日：2019-04-23

  Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

  提供了生产纳米结构，特别是 III-V 族半导体纳米结构的方法。这些方法包括使用新型 III 族和/或 V 族前体、新型表面活性剂、氧化物受体、高温和/或稳定的副产品。还描述了相关的组合物。提供了生产可用作纳米结构合成前体的 III 族无机化合物的方法和组合物。还介绍了通过去除气相副产物提高合成反应中纳米结构产率的方法。
• USE OF HETEROLEPTIC INDIUM HYDROXIDES AS PRECURSORS FOR INP NANOCRYSTALS
  申请人：NANOSYS, Inc.

  公开号：US20170137360A1

  公开（公告）日：2017-05-18

  The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.
• US9884763B1
  申请人：——

  公开号：US9884763B1

  公开（公告）日：2018-02-06
• [EN] USE OF HETEROLEPTIC INDIUM HYDROXIDES AS PRECURSORS FOR INP NANOCRYSTALS<br/>[FR] UTILISATION D'HYDROXYDES D'INDIUM HÉTÉROLEPTIQUES EN TANT QUE PRÉCURSEURS DE NANOCRISTAUX D'INP
  申请人：NANOSYS INC

  公开号：WO2017083483A1

  公开（公告）日：2017-05-18

  The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.