Chemical mechanical planarization for tungsten-containing substrates
申请人:AIR PRODUCTS AND CHEMICALS, INC.
公开号:EP2779217A2
公开(公告)日:2014-09-17
Chemical mechanical polishing (CMP) compositions for polishing tungsten or tungsten-containing substrates comprise an abrasive, at least one solid catalyst, a chemical additive selected from the groups consisting of piperazine derivatives, salts of cyanate, and combinations thereof; and a liquid carrier. Systems and processes use the aqueous formulations for polishing tungsten or tungsten-containing substrates.