iridium manganese | 12142-03-9

• 分子结构分类: 无机化合物 - 均相金属化合物 - 均相过渡金属化合物
• 英文名称: iridium manganese
• 英文别名: manganese-iridium；Iridium--manganese (1/1)；iridium;manganese
• CAS: 12142-03-9
• 化学式: IrMn
• 分子量: 247.158
• InChiKey: SHMWNGFNWYELHA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.01
• 重原子数：
  2
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  以 solid 为溶剂， 生成 iridium manganese
  参考文献：
  名称：

  High-sensitivity GMR with low coercivity in top-IrMn spin-valves

  摘要：

  Top-IrMn spin-valves with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta have been investigated. The spin-valves were deposited by high vacuum DC magnetron sputtering at room temperature. The magnetoresistance ratio reaches 9.12% at room temperature. The coercivity of the free layer and the exchange bias field is 1.04 and 180 Oe, respectively. The maximum sensitivity of the spin-valves is 8.36%/Oe. A reduction of 33.2% of the coercivity was obtained after a 2-min RIE process. Utilizing standard integrated circuit (IC) process, mass production of robust giant magnetoresistance sensors can be achieved with these spin-valve thin films. (C) 2003 Elsevier Science B.V. All rights reserved.

  DOI：

  10.1016/s0304-8853(03)00407-4