Microcrystalline organic semiconductor film, organic semiconductor transistor, and method of manufacturing organic semiconductor transistor
申请人:FUJIFILM Corporation
公开号:US10985327B2
公开(公告)日:2021-04-20
Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat.
Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm.
X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.
本发明提供了一种有机半导体薄膜、一种由该有机半导体薄膜形成的有机半导体晶体管以及一种制造该有机半导体晶体管的方法。在有机半导体薄膜中,即使在有机半导体薄膜被图案化或暴露于高热的情况下,也能有效抑制裂纹的形成或传播。
本发明提供了一种有机半导体薄膜、由该有机半导体薄膜形成的有机半导体晶体管以及该有机半导体晶体管的制造方法。微晶有机半导体薄膜包括由下式(1)表示的化合物,该化合物的分子量为 3000 或更低,其晶域尺寸为 1 nm 至 100 nm。
X、Y 和 Z 各自独立地代表一个特定的成环原子。R1 和 R2 各自独立地代表氢原子、烷基、烯基、炔基、芳基或杂芳基。R3 和 R4 各自独立地代表卤原子、烷基、烯基、炔基、芳基或杂芳基。