[EN] PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS<br/>[FR] PROCÉDÉ DE PRODUCTION DE FILMS MINCES INORGANIQUES
申请人:BASF SE
公开号:WO2018041695A1
公开(公告)日:2018-03-08
The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p + q = 3, and m is 1, 2, or 3.
本发明涉及用于在基板上生成薄无机膜的工艺领域,特别是原子层沉积过程。本发明涉及一种生成无机膜的工艺,包括将通式(I)化合物沉积在固体基板(I)上,其中M为Mn、Ni或Co,X为配位M的配体,n为0、1、2、3或4,R1为烷基、烯基、芳基、卤素或硅基,R2为烷基、烯基、芳基或硅基,p和q为1或2,其中p+q=3,m为1、2或3。