FT-IR Study of the Gas-Phase Autoxidation of Trimethylgermane
摘要:
The kinetics and mechanism of the autoxidation of trimethylgermane in the gas phase has been investigated in the temperature range 493-533 K using Fourier transform infrared spectroscopy. Over a wide molar ratio of reactants (Me3GeH:O2 ratio in the range (1:1)-(1:31)) the loss of Me3GeH follows second-order kinetics but is independent of oxygen abundance. The products of the reaction are heyamethyldigermoxane, Me3GeOGeMe3, and water. No other products are apparent. For a 1:10 Me3GeH:02 molar ratio, second-order rate constants vary from 2.46 mol-1 de s-1 at 493 K to 64.1 mol-1 dm3 s-1 at 533 K. The activation energy for the process -is determined to be 190 +/- 19 kJ mol-1. The proposed mechanism involves an initial abstraction of the hydridic hydrogen atom from germanium followed by the reaction of the trimethylgermyl radical thus formed with oxygen, giving the (trimethylgermyl)peroxyl radical. This radical is converted into trimethylgermyl hydroperoxide, Me3GeOOH, by further H-abstraction from Me3GeH and undergoes O-O bond fission to form (trimethylgermyl)oxyl and hydroxyl radicals. The radicals thus produced propagate the reaction by H-abstraction from Me3GeH, forming the intermediate Me3GeOH and water. Hexamethyldigermoxane is subsequently formed by self-condensation of two Me3GeOH molecules.
On the role of the solid–gas interface in the thermolysis of trimethylgermane and trimethylstannane
作者:Philip G. Harrison、James McManus、David M. Podesta
DOI:10.1039/c39920000291
日期:——
Metal film surfaces have a profound effect on the thermal decomposition of Me3MH (M = Ge and Sn), both of which unusually decompose by half-order kinetics at elevated temperature.
金属薄膜表面对于Me3MH(M = Ge 和 Sn)的热分解具有深远的影响,这两种物质在高温下都异常地通过半阶动力学进行分解。
Reactions of (CH3)3SnM(CH3)3 (M = Si; Ge) with chlorotrimethylstannane and dichlorodimethylstannane in methanol solution
作者:Matthew J. Cuthbertson、Peter R. Wells
DOI:10.1016/0022-328x(85)80065-6
日期:1985.5
The reactions of (CH3)3SnM(CH3)3 for M = Si and Ge with (CH3)3SnCl or (CH3)2SnCl2 in methanol follow the same path as the corresponding reactions of (CH3)6Sn2, and involve SnCH3cleavage at essentially the same rate. Complications arise from reaction of HCl generated by (CH3)3MCl solvolysis with the intermediate dimethylstannylene, but not through its reaction with the substrates.
M = Si和Ge的(CH 3)3 SnM(CH 3)3与(CH 3)3 SnCl或(CH 3)2 SnCl 2在甲醇中的反应遵循与(CH 3)相应反应相同的路径6 Sn 2和Sn 3 CH 3的裂解基本相同。复杂性是由(CH 3)3 MCl溶剂分解生成的HCl与中间体二甲基亚锡的反应引起的,而不是由其与底物的反应引起的。