bis[bis(trimethylsilyl)methyl]gallium bromide | 141120-24-3

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: bis[bis(trimethylsilyl)methyl]gallium bromide
• 英文别名: bis{bis(trimethylsilyl)methyl}gallium bromide；[[bis(trimethylsilyl)methyl-bromogallanyl]-trimethylsilylmethyl]-trimethylsilane
• CAS: 141120-24-3
• 化学式: C₁₄H₃₈BrGaSi₄
• 分子量: 468.425
• InChiKey: OCHSQPLGXNQMCC-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  6.62
• 重原子数：
  20.0
• 可旋转键数：
  6.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  bis[bis(trimethylsilyl)methyl]gallium bromide 、 lithium tris(trimethylsilyl)silyltelluride * 1,2-dimethoxyethane 以 甲苯 为溶剂， 以57%的产率得到(bis{bis(trimethylsilyl)methyl}gallium){tris(trimethylsilyl)silyl}telluride
  参考文献：
  名称：

  Uhl, Werner; Layh, Marcus; Becker, Gerd, Chemische Berichte, 1992, vol. 125, # 7, p. 1547 - 1552

  摘要：

  DOI：
• 作为产物：
  描述：

  Ga2Br4(dioxane)2 、 bis(trimethylsilyl)methyllithium 以 乙醚 为溶剂， 以54%的产率得到bis[bis(trimethylsilyl)methyl]gallium bromide
  参考文献：
  名称：

  Uhl, Werner; Layh, Marcus; Becker, Gerd, Chemische Berichte, 1992, vol. 125, # 7, p. 1547 - 1552

  摘要：

  DOI：

文献信息

• Diazomethane Derivatives Bearing Dialkylaluminium or DialkylgalliumSubstituents – The Isomeric Diazomethane and Nitrile Imine Structures Realized by the Different Coordination Behavior of Aluminium and Gallium
  作者：Werner Uhl、Frank Hannemann、Wolfgang Saak、Rudolf Wartchow

  DOI：10.1002/(sici)1099-0682(199905)1999:5<771::aid-ejic771>3.0.co;2-y

  日期：1999.5

  trimethylsilyldiazomethanide Li(SiMe3)CN2 reacted with the dialkylaluminium or -gallium halides R2AlCl and R2GaBr [R = CH(SiMe3)2] by the elimination of lithium halide and the formation of the corresponding aluminium or gallium diazo compounds. As shown by a crystal structure determination, the gallium derivative 1 adopts the nitrile imine structure, in which the gallium atom is coordinated by the terminal nitrogen

  三甲基甲硅烷基重氮甲烷化锂 Li(SiMe3)CN2 与二烷基铝或卤化镓 R2AlCl 和 R2GaBr [R = CH(SiMe3)2] 反应，通过消除卤化锂并形成相应的铝或镓重氮化合物。由晶体结构测定可知，镓衍生物1采用腈亚胺结构，其中镓原子与重氮基团的末端氮原子配位。N-N-C-Si 部分几乎是理想的线性，N-N 和 C-N 键长平均为 125.5 和 115.9 pm。相比之下，重氮甲烷结构是用二烷基氯化铝形成的，2中的铝原子与重氮甲烷的碳原子相连。几乎线性的 N–N–C 组 (174.1°) 的 N–N 和 N–C 距离分别为 120.0 和 126.4 pm，与镓衍生物相反。键合情况可以通过共振结构 R–C≡N+–N-–GaR2 为 1 和 R2Al–(R)C=N+=N- 为 2 来描述。铝化合物的腈亚胺异构体可以通过以下方式检测核磁共振光谱作为副产品。两种化合物均在固态下产生二聚体，Ga2N2
• Verbrückende und terminale Koordination von Ga-Ga-Bindungen durch die Chelatliganden Imidotetraphenyldiphosphinat bzw. -dithiodiphosphinat
  作者：Werner Uhl、Thomas Spies、Wolfgang Saak

  DOI：10.1002/(sici)1521-3749(199912)625:12<2095::aid-zaac2095>3.0.co;2-q

  日期：1999.12

  Tetrakis[bis(trimethylsilyl)methyl]digallane(4) (1) reacted with imidotetraphenyldiphosphinic acid to yield two products, which were separated by recrystallization: The first one, bis[bis(trimethylsilyl)methyl]-imidotetraphenyl-diphosphinato-O,O'-gallium (2), resulted from the cleavage of the Ga-Ga bond and contained a dialkylgallium unit, which was coordinated by a chelating imidodiphosphinato ligand. The digallium compound 1,2-bis[bis(trimethylsilyl)methyl]-bis(mu-tetraphenyldiphosphinato-O,O')digallium (3) was formed as the second product by a substituent exchange reaction and the release of bis(trimethylsilyl)methane. Its Ga-Ga bond (245.7 pm) was bridged by two imidodiphosphinato ligands. In contrast, the reaction of digallane(4) 1 with the sulfur derivative imidotetraphenyldithiodiphosphinic acid afforded a complicated mixture of unknown products. A compound analogous to 3 containing two imidodithiodiphosphinato ligands (5) was, however, obtained in a moderate yield by the precipitation of lithium acetate, when we treated dialkyldi(mu-acetato)digallium (4) with lithium imidotetraphenyldithiodiphosphinate. Remarkably, the chelating ligands did not adopt a bridging position across the Ga-Ga bond (249.9 pm) similar to 3, but each one was terminally coordinated to one Ga atom.