Single-Source Chemical Vapor Deposition of 3C-SiC Films in a LPCVD Reactor
作者:Muthu B. J. Wijesundara、Gianluca Valente、William R. Ashurst、Roger T. Howe、Albert P. Pisano、Carlo Carraro、Roya Maboudian
DOI:10.1149/1.1646141
日期:——
We report the deposition of 3C-SiCfilms on an Si(100) substrate from 1,3-disilabutane precursor molecule utilizing a conventional low-pressure chemicalvapordeposition (CVD) system. The chemical, structural, and growth properties of the resulting films are investigated as functions of deposition temperature and flow rates. Based on X-ray photoelectron spectroscopy, the films deposited at temperatures