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dibutylchloro(pentyl)stannane

中文名称
——
中文别名
——
英文名称
dibutylchloro(pentyl)stannane
英文别名
Tributyltin chloride;tributylstannyl chloride;Dibutyl-chloro-pentylstannane;dibutyl-chloro-pentylstannane
dibutylchloro(pentyl)stannane化学式
CAS
——
化学式
C13H29ClSn
mdl
——
分子量
339.536
InChiKey
AFKNLWHHWIZMSR-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5.96
  • 重原子数:
    15
  • 可旋转键数:
    10
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

反应信息

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文献信息

  • [EN] NOVEL TRICYCLIC COMPOUNDS<br/>[FR] NOUVEAUX COMPOSÉS TRICYCLIQUES
    申请人:JACOBIO BETA PHARMACEUTICALS CO LTD
    公开号:WO2019080941A1
    公开(公告)日:2019-05-02
    This invention relates to certain novel tricyclic compounds as bromodomain and extra-terminal (BET) inhibitors, their synthesis and their use for treating diseases. More particularly, this invention is directed to fused heterocyclic derivatives useful as inhibitors of BET, methods for producing such compounds and methods for treating diseases and conditions wherein inhibition of one or more BET bromodomains provides a benefit.
    这项发明涉及某些新颖的三环化合物,作为溴结构域和额外末端(BET)抑制剂,它们的合成以及它们用于治疗疾病。更具体地说,这项发明涉及有用作BET抑制剂的融合杂环衍生物,生产这类化合物的方法以及治疗疾病和病况的方法,其中抑制一个或多个BET溴结构域会带来益处。
  • New Bithiophene Extended IDIC-Based Non-Fullerene Acceptors and Organic Photovoltaics Thereof
    作者:Yeong Heon Jeong、Jae Min Jeon、Jun Young Kim、Yun-Hi Kim
    DOI:10.3390/molecules27031113
    日期:——

    We developed new bithiophene extended electron acceptors based on m-alkoxythenyl-substituted IDIC with three different end groups, named as IDT-BT-IC, IDT-BT-IC4F, and IDT-BT-IC4Cl, respectively. The ultraviolet absorption maximum was redshifted and the bandgap was decreased as the strong electron accepting ability of the end group increased. A differential scanning calorimetry thermogram analysis revealed that all the new acceptors have a crystalline character. Using these acceptors and a bulk heterojunction structure using PBDB-T, inverted organic photovoltaic (OPV) devices were fabricated, and their performance was analyzed. Due to the red shift of the electron acceptors, the OPV active layer particularly, which was derived from IDT-BT-IC4F, exhibited increased absorption at long wavelengths over 800 nm. The OPV prepared using IDT-BT-IC exhibited a short-circuit current density (Jsc) of 2.30 mA/cm2, an open-circuit voltage (Voc) of 0.95 V, a fill factor (FF) of 45%, and a photocurrent efficiency (PCE) of 1.00%. Using IDT-BT-IC4F, the corresponding OPV device showed Jsc = 8.31 mA/cm2, Voc = 0.86 V, FF = 47%, and PCE = 3.37%. The IDT-BT-IC4Cl-derived OPV had Jsc = 3.00 mA/cm2, Voc = 0.89 V, FF = 29%, and PCE = 0.76%. When IDT-BT-IC4F was used as the electron acceptor, the highest Jsc and PCE values were achieved. The results show that the low average roughness (0.263 nm) of the active layer improves the extraction of electrons.

    我们开发了基于m-烷氧基乙烯基取代IDIC的新双噻吩扩展电子受体,分别命名为IDT-BT-IC、IDT-BT-IC4F和IDT-BT-IC4Cl。随着末端基团强电子受体能力的增加,紫外吸收峰向红移,带隙减小。差示扫描量热法热谱分析表明,所有新的受体具有结晶性质。使用这些受体和采用PBDB-T的体异质结构,制备了反转有机光伏(OPV)器件,并对其性能进行了分析。由于电子受体的红移,特别是源自IDT-BT-IC4F的OPV有源层,在800 nm以上的长波长处表现出增加的吸收。使用IDT-BT-IC制备的OPV表现出短路电流密度(Jsc)为2.30 mA/cm2,开路电压(Voc)为0.95 V,填充因子(FF)为45%,光电流效率(PCE)为1.00%。使用IDT-BT-IC4F,相应的OPV器件显示Jsc = 8.31 mA/cm2,Voc = 0.86 V,FF = 47%,PCE = 3.37%。IDT-BT-IC4Cl衍生的OPV具有Jsc = 3.00 mA/cm2,Voc = 0.89 V,FF = 29%和PCE = 0.76%。当IDT-BT-IC4F用作电子受体时,实现了最高的Jsc和PCE值。结果表明,有源层的低平均粗糙度(0.263 nm)可以提高电子的提取。
  • WO2008/128321
    申请人:——
    公开号:——
    公开(公告)日:——
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