Organometallic precursors to the formation of GaN by MOCVD: structural characterisation of Me3Ga · NH3 by gas-phase electron diffraction
作者:Matthew J. Almond、Carolyn E. Jenkins、David A. Rice、Kolbjørn Hagen
DOI:10.1016/0022-328x(92)85091-a
日期:1992.11
which is in accord with the lone pair from the nitrogen atom being donated into the pz orbital on the gallium atom. This suggestion is supported by the gas-phase and low temperature infra-red spectroscopic data that are reported. Evidence is also presented suggesting the GaN bond is weak and thus it is not surprising that when NH3 and Me3Ga are used to grow GaN it is necessary to use NH3 / Me3Ga ratios
我的分子结构3镓·NH 3 [我]已经研究了气相电子衍射在25℃。实验数据由模型其中C嵌合3分子的GaN芯具有Ç 3 v对称性。根据四个键距,三个价角和两个扭转角定义分子。结合距离中的三个被精炼(r g(GaN)= 2.161(22)°,r g(GaC)= 1.979(3)Å,r g(CH)= 1.109(7)Å) 。必须将第四键距保持在假定值[ r g(NH)= 1.045埃]。精化了两个化合价角(NGaC= 101.8(62)°,GaC= H = 111.3(16)°),第三个价角(GaNH)保持在109.0°。扭转角HN/GaC保持在60.0°,而剩余的扭转角HC/GaN细化到37.5(224)°。相依角CGadependentC为115.9(42)°,因此C 3 Ga片段离平面不远,这与将氮原子捐赠给镓原子上的p z轨道的孤对相符。。所报告的气相和低