[EN] HAFNIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION<br/>[FR] PRÉCURSEURS CONTENANT DU HAFNIUM POUR UN DÉPÔT EN PHASE VAPEUR
申请人:AIR LIQUIDE
公开号:WO2013177284A1
公开(公告)日:2013-11-28
Disclosed are hafnium-containing precursors and methods of synthesizing the same. The precursors may be used to deposit hafnium oxide, hafnium silicon oxide and hafnium-metal oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
[EN] TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION<br/>[FR] PRÉCURSEURS CONTENANT DU TITANE POUR UN DÉPÔT EN PHASE VAPEUR
申请人:AIR LIQUIDE
公开号:WO2013177292A1
公开(公告)日:2013-11-28
Disclosed are titanium-containing precursors and methods of synthesizing the same. The precursors may be used to deposit titanium oxide, titanium silicon oxide and titanium-metal oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
[EN] ZIRCONIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION<br/>[FR] PRÉCURSEURS CONTENANT DU ZIRCONIUM POUR LE DÉPÔT EN PHASE VAPEUR
申请人:AIR LIQUIDE
公开号:WO2013177269A2
公开(公告)日:2013-11-28
Disclosed are zirconium-containing precursors and methods of synthesizing the same. The precursors may be used to deposit zirconium oxide, zirconium silicon oxide and zirconium-metal oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.