The gas phase molecular structure of silyl formate, determined by electron diffraction
作者:W. Bett、S. Cradock、D.W.H. Rankin
DOI:10.1016/0022-2860(80)80168-2
日期:1980.9
Abstract The structure of silyi formate, HCOOSiH 3 , in the gas phase is determined by electron diffraction. The principal bond lengths and angles ( r a ) are r (Si-O) = 169.5 ± 0.3 pm, r (C-O) = 135.1 ± 0.6 pm, r (C O) = 120.9 ± 0.7 pm, ∠(C-O-Si) = 116.8 ± 0.5°, ∠(OC-O) = 123.5 ± 0.5°. The silyi group is twisted by 21° away from the planar cis conformation but there is nevertheless a very short
摘要 通过电子衍射确定了气相中甲硅烷基甲酸 HCOOSiH 3 的结构。主要键长和键角 ( ra ) 为 r (Si-O) = 169.5 ± 0.3 pm, r (CO) = 135.1 ± 0.6 pm, r (C O) = 120.9 ± 0.7 pm, ∠(CO-Si) = 116.8 ± 0.5°,∠(OCO) = 123.5 ± 0.5°。silyi 基团从平面顺式构象扭曲了 21°,但仍然存在非常短的 (286.5 ±1.0 pm) 非键合 Si·O 接触。