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N-Methyl-N-{[(trimethylstannyl)sulfanyl]carbonothioyl}butan-1-amine | 401592-87-8

中文名称
——
中文别名
——
英文名称
N-Methyl-N-{[(trimethylstannyl)sulfanyl]carbonothioyl}butan-1-amine
英文别名
trimethylstannyl N-butyl-N-methylcarbamodithioate
N-Methyl-N-{[(trimethylstannyl)sulfanyl]carbonothioyl}butan-1-amine化学式
CAS
401592-87-8
化学式
C9H21NS2Sn
mdl
——
分子量
326.114
InChiKey
JAYVTWORPUZYED-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.57
  • 重原子数:
    13
  • 可旋转键数:
    5
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.89
  • 拓扑面积:
    60.6
  • 氢给体数:
    0
  • 氢受体数:
    2

反应信息

  • 作为反应物:
    描述:
    N-Methyl-N-{[(trimethylstannyl)sulfanyl]carbonothioyl}butan-1-amine硫化氢 以 neat (no solvent) 为溶剂, 生成 tin(III) sulfide
    参考文献:
    名称:
    Organotin unsymmetric dithiocarbamates: synthesis, formation and characterisation of tin(II) sulfide films by atmospheric pressure chemical vapour deposition
    摘要:
    A series of tin unsymmetric dithiocarbamate complexes have been made from metathesis reaction of [CH3(C4H9)NSC2]Li and RnSnCl4-n; [RnSn(S2CN(C4H9)CH3)(4-n)] [n = 3, R = Me (1), Bu (2), Ph (3); n = 2, R = Me (4), Bu (5), Ph (6); n = 1, R = Me (7), Bu (8), Ph (9)]. The complexes were characterised by microanalysis, C-13, H-1 and Sn-119 NMR, Mossbauer and, in the case of 3, by X-ray diffraction, which revealed one short Sn-S [2.4631(9) Angstrom] and one long Sn-S interaction [3.084(l) Angstrom] indicative of a weakly chelating dithiocarbamate ligand. Atmospheric pressure chemical vapour deposition using I and 8 with H2S at 350-550 degreesC produced SnS and Sn2S3 films on glass substrates. The tin sulfides were analysed by Raman, EDAX, SEM and band gap measurements. Growth rates were of the order of 150 nm min(-1). (C) 2001 Published by Elsevier Science Ltd.
    DOI:
    10.1016/s0277-5387(01)00908-1
  • 作为产物:
    描述:
    三甲基氯化锡 、 lithium;N-butyl-N-methylcarbamodithioate 以 二氯甲烷 为溶剂, 以85%的产率得到N-Methyl-N-{[(trimethylstannyl)sulfanyl]carbonothioyl}butan-1-amine
    参考文献:
    名称:
    Organotin unsymmetric dithiocarbamates: synthesis, formation and characterisation of tin(II) sulfide films by atmospheric pressure chemical vapour deposition
    摘要:
    A series of tin unsymmetric dithiocarbamate complexes have been made from metathesis reaction of [CH3(C4H9)NSC2]Li and RnSnCl4-n; [RnSn(S2CN(C4H9)CH3)(4-n)] [n = 3, R = Me (1), Bu (2), Ph (3); n = 2, R = Me (4), Bu (5), Ph (6); n = 1, R = Me (7), Bu (8), Ph (9)]. The complexes were characterised by microanalysis, C-13, H-1 and Sn-119 NMR, Mossbauer and, in the case of 3, by X-ray diffraction, which revealed one short Sn-S [2.4631(9) Angstrom] and one long Sn-S interaction [3.084(l) Angstrom] indicative of a weakly chelating dithiocarbamate ligand. Atmospheric pressure chemical vapour deposition using I and 8 with H2S at 350-550 degreesC produced SnS and Sn2S3 films on glass substrates. The tin sulfides were analysed by Raman, EDAX, SEM and band gap measurements. Growth rates were of the order of 150 nm min(-1). (C) 2001 Published by Elsevier Science Ltd.
    DOI:
    10.1016/s0277-5387(01)00908-1
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文献信息

  • Organotin unsymmetric dithiocarbamates: synthesis, formation and characterisation of tin(II) sulfide films by atmospheric pressure chemical vapour deposition
    作者:A.T. Kana、T.G. Hibbert、M.F. Mahon、K.C. Molloy、I.P. Parkin、L.S. Price
    DOI:10.1016/s0277-5387(01)00908-1
    日期:2001.11
    A series of tin unsymmetric dithiocarbamate complexes have been made from metathesis reaction of [CH3(C4H9)NSC2]Li and RnSnCl4-n; [RnSn(S2CN(C4H9)CH3)(4-n)] [n = 3, R = Me (1), Bu (2), Ph (3); n = 2, R = Me (4), Bu (5), Ph (6); n = 1, R = Me (7), Bu (8), Ph (9)]. The complexes were characterised by microanalysis, C-13, H-1 and Sn-119 NMR, Mossbauer and, in the case of 3, by X-ray diffraction, which revealed one short Sn-S [2.4631(9) Angstrom] and one long Sn-S interaction [3.084(l) Angstrom] indicative of a weakly chelating dithiocarbamate ligand. Atmospheric pressure chemical vapour deposition using I and 8 with H2S at 350-550 degreesC produced SnS and Sn2S3 films on glass substrates. The tin sulfides were analysed by Raman, EDAX, SEM and band gap measurements. Growth rates were of the order of 150 nm min(-1). (C) 2001 Published by Elsevier Science Ltd.
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