Oxidation of methylsilenes with molecular oxygen. A matrix isolation study
作者:Martin Trommer、Wolfram Sander、Andreas Patyk
DOI:10.1021/ja00078a016
日期:1993.12
investigated in O 2 -doped argon matrices. All silenes 1 are easily photooxidized in matrices containing more than 1% O 2 , but trimethylsilene (1c) is the only silene that exhibits thermal reactivity toward oxygen at temperatures as low as 20-40 K. The photochemical reactivity increases from 1a to 1c with increasing number of methyl groups at the double bond and decreasing ionization potential. Key intermediates
已在 O 2 掺杂的氩基质中研究了 1-甲基硅烯(2-硅丙烯)(1a)、1,1-二甲基硅烯(1b)和 1,1,2-三甲基硅烯(1c)的光化学和热氧化。所有 silene 1 在含有超过 1% O 2 的基质中很容易被光氧化,但三甲基硅烷 (1c) 是唯一一种在低至 20-40 K 的温度下对氧气表现出热反应性的 silene。光化学反应性从 1a 增加到 1c双键上的甲基数量增加,电离电位降低。1 的光化学和热氧化的关键中间体是硅二氧杂环丁烷 9