N,N,N-Triethyl-3-(trimethoxysilyl)propan-1-aminium chloride | 53662-11-6

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: N,N,N-Triethyl-3-(trimethoxysilyl)propan-1-aminium chloride
• 英文别名: triethyl(3-trimethoxysilylpropyl)azanium;chloride
• CAS: 53662-11-6
• 化学式: C12H30ClNO3Si
• 分子量: 299.91
• InChiKey: QPNFCOYHKJGNTA-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  -0.86
• 重原子数：
  18
• 可旋转键数：
  10
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  27.7
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  三乙胺 、 3-氯丙基三甲氧基硅烷 在 氮气 、 乙酸乙酯 、 乙醚 、 三乙胺 、 3-氯丙基三甲氧基硅烷 、 甲醇 作用下， 以 乙酸乙酯 为溶剂， 反应 72.0h， 以to obtain a 30% methanol solution of trimethoxysilylpropyltriethylammonium chloride的产率得到N,N,N-Triethyl-3-(trimethoxysilyl)propan-1-aminium chloride
  参考文献：
  名称：

  Resist underlayer film forming composition containing silicone having onium group

  摘要：

  提供一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬掩膜或底部抗反射涂层的抗蚀底层膜，或者不与光刻胶混合且具有比光刻胶更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物是一种可水解的有机硅烷，在其分子中具有onium基团、其水解产物或其水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。该组合物包括具有onium基团的硅烷化合物和不具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物在整个硅烷化合物中的比例小于1%摩尔，例如0.01至0.95%摩尔。可水解的有机硅烷可以是公式的化合物：R1aR2bSi（R3）4-（a+b）。通过将所述组合物按权利要求1至14中的任一项涂覆到半导体基片上并烘烤所得到的抗蚀底层膜。

  公开号：

  US08864894B2

文献信息

• Tintable abrasion resistant coating compositions
  申请人：Dow Corning Corporation

  公开号：US05232964A1

  公开（公告）日：1993-08-03

  This invention relates to radiation curable abrasion resistant coatings for solid substrates which are tintable. The compositions of the present invention contain a quaternary ammonium salt as a tintability enhancing compound. The cured coatings of this invention simultaneously resist abrasion and provide superior tintability.

  本发明涉及一种可辐射固化的耐磨涂层，适用于固体基材，可进行着色。本发明的组成物包含一种季铵盐作为增强着色性的化合物。本发明的固化涂层同时具有耐磨性和卓越的着色性。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP
  申请人：Shibayama Wataru

  公开号：US20110143149A1

  公开（公告）日：2011-06-16

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R 1 a R 2 b Si(R 3 ) 4-(a+b) . A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供了一种用于光刻的抗阻底层膜成分，用于形成可用作硬掩模或底部防反射涂层的抗阻底层膜，或者是不与抗阻混合并具有比抗阻更高的干法蚀刻速率的抗阻底层膜。该膜形成成分包括具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物是具有水解性的有机硅烷，其分子中具有onium基团、其水解产物或其水解缩合产物。该成分用作光刻的抗阻底层膜形成成分。一种成分包括具有onium基团的硅烷化合物和不具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物在整个硅烷化合物中的比例小于1摩尔％，例如为0.01至0.95摩尔％。该水解性有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。通过将所述任一权利要求1至14中的任一成分应用于半导体基板并烘烤所述成分，可以获得抗阻底层膜。
• Resist underlayer film forming composition containing silicone having onium group
  申请人：Shibayama Wataru

  公开号：US08864894B2

  公开（公告）日：2014-10-21

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4−(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬掩膜或底部抗反射涂层的抗蚀底层膜，或者不与光刻胶混合且具有比光刻胶更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物是一种可水解的有机硅烷，在其分子中具有onium基团、其水解产物或其水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。该组合物包括具有onium基团的硅烷化合物和不具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物在整个硅烷化合物中的比例小于1%摩尔，例如0.01至0.95%摩尔。可水解的有机硅烷可以是公式的化合物：R1aR2bSi（R3）4-（a+b）。通过将所述组合物按权利要求1至14中的任一项涂覆到半导体基片上并烘烤所得到的抗蚀底层膜。