PRECURSORS AND METHODS FOR PREPARING SILICON-CONTAINING FILMS
申请人:ENTEGRIS, INC.
公开号:US20210301400A1
公开(公告)日:2021-09-30
Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.
作者:V. I. Rakhlin、A. N. Fomina、R. G. Mirskov、V. G. Kanaev、L. G. Larionova、M. G. Voronkov
DOI:10.1023/a:1022527112583
日期:——
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作者:A. N. Fomina、B. A. Gostevskii、R. G. Mirskov、M. G. Voronkov、V. I. Rakhlin、V. A. Lopyrev
DOI:10.1023/a:1015385010312
日期:——
Heating of dimethyl (2,2-dimethylhydrazino)si lane and methylbis(2,2-dimethylhydrazino)silane with 1-hexene or styrene in the presence of a catalytic amount of rhodium dicarbonylacetylacetonate gives rise to adducts by the terminal carbon atom (yields 45-84%). The same reactions with phenylacetylene give complex mixtures of products formed primarily by disproportionation of the starting organosilicon reagents.