Precise determination of stabilities of primary, secondary, and tertiary silicenium ions from kinetics and equilibria of hydride-transfer reactions in the gas phase. A quantitative comparison of the stabilities of silicenium and carbonium ions in the gas phase
The reactions of Si+ ions with CH3SiH3, CH3SiD3, C2H6, and CH3CHD2
摘要:
The reactions of Si+ with CH3SiH3, CH3SiD3, C2H6, and CH3CHD2 have been studied in a tandem mass spectrometric apparatus over the kinetic energy range of 1–10 eV laboratory-frame-of reference (LAB). In all systems, the major process is the formation of SiCH+3, as well as SiCH2D+ and SiCHD+2 in the case of the reaction with CH3CHD2. It is shown that in the reaction of Si+ with CH3SiH3 and CH3SiD3, the process is best described as a Walden inversion, while in the reaction with C2H6 and CH3CHD2, the process appears to approximate the spectator stripping model or modified spectator stripping (polarization-reflection model). In the reaction with CH3CHD2, the slight preference of Si+ to strip the CH3 radical rather than the CHD2 radical is shown to be in accord with a cross-sectional energy dependence of approximately E−1.
The crosssections for simple and dissociative ionization of tetramethylsilane ((CH3)4Si or TMS) by electron impact have been measured using Fourier-transform mass spectrometry. The total ionizationcrosssection is 8.5 x 10−16 cm2 between 30 and 70eV. The molecular ion is Jahn-Teller unstable, with dissociative ionization to form (CH3)3Si+ dominating the mass spectrum. CH3SiH2+ and CH3Si+ react rapidly
已经通过傅里叶变换质谱法测量了四甲基硅烷((CH 3)4 Si或TMS)通过电子撞击进行简单和解离电离的横截面。总电离横截面在30至70 eV之间为8.5 x 10 -16 cm 2。该分子离子是Jahn-Teller不稳定的,具有离解电离形成(CH 3)3 Si +占主导地位的质谱。CH 3 SiH 2 +和CH 3 Si +与TMS快速反应生成(CH 3)3 Si +。(CH3)3 Si +不与TMS反应,但会被背景水蒸气缓慢水合。
Unimolecular dissociation of methylsilylium and monochloromethylsilylium in the gas phase
作者:R. Bakhtiar、C. M. Holznagel、D. B. Jacobson
DOI:10.1021/j100151a014
日期:1993.12
The mechanisms for the lowest energy barrier pathways for unimolecular dissociation of CH3SiH2+ and CH3-Si(Cl)H+ were examined in the gas phase by using Fourier transform mass spectrometry (FIMS). Collision-activated dissociation (CAD) by using sustained ''off-resonance'' irradiation (SORI) was used to determine the lowest energy pathways for dissociation. The lowest energy pathway for decomposition of CH3SiH2+ is dehydrogenation. The mechanism for this dehydrogenation process was investigated by studying the decomposition of CH3SiD2+. Unfortunately, isotopic scrambling by reversible 1,2-hydrogen migrations precede dehydrogenation. Hence, no mechanistic information is obtained from this isotopic labeling experiment. SORI-CAD of CH3SiD2+ yields dehydrogenation as H-2 (0.67) and HD (0.33) with no D2 loss. The lowest energy pathway for dissociation of CH3Si(Cl)H+ is elimination of HCl. In contrast to CH3SiD2+, CH3Si(CI)D+ does not undergo isotopic scrambling upon CAD. SORI-CAD of CH3Si(Cl)D+ yields exclusive elimination of HCl(1,2-elimination) to yield CH2SiD+. Hence, the lowest energy pathway for dissociation of CH3Si(Cl)H+ is 1,2-elimination of HCI. 1,1-Elimination of DCl from CH3Si(CI)D+ to yield CH3Si+ is 38 kcal/mol more favorable than the 1,2-elimination process. Consequently, there must be a prohibitive barrier for the energetically more favorable 1,1-elimination process.