(4-Triaethylsilyl-phenyl)-trimethylsilyl-aethin | 16116-89-5

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: (4-Triaethylsilyl-phenyl)-trimethylsilyl-aethin
• CAS: 16116-89-5
• 化学式: C₁₇H₂₈Si₂
• 分子量: 288.58
• InChiKey: GDGJUEMKPRCXGM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.63
• 重原子数：
  19.0
• 可旋转键数：
  4.0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.53
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  (4-Triaethylsilyl-phenyl)-trimethylsilyl-aethin 在 异丙基氯化镁 、 potassium carbonate 作用下， 以 四氢呋喃 、 甲醇 为溶剂， 反应 2.0h， 生成
  参考文献：
  名称：

  Novel soluble pentacene and anthradithiophene derivatives for organic thin-film transistors

  摘要：

  Four new solution-processable pentacene- (PEN) and anthradithiophene- (ADT) based organic semiconductors bearing two phenylethynyl (PE-) or triethylsilylphenylethynyl (TESPE-) substituents have been synthesized, characterized, and incorporated in thin-film transistors (TFTs). The molecular structures of these four materials have been determined by single-crystal X-ray diffraction. Thin films of all four compounds have been fabricated via drop-casting and exhibited p-channel OTFT transport with hole mobilities as high as similar to 0.01 cm(2)/V s. Compared to PEN derivatives, ADT-based compounds exhibited superior device performance and photooxidative stability in ambient. The film morphologies and microstructures of these compounds have been characterized by optical microscopy and X-ray diffraction to rationalize device performance trends. (C) 2010 Elsevier B.V. All rights reserved.

  DOI：

  10.1016/j.orgel.2010.04.029
• 作为产物：
  描述：

  三乙基氯硅烷 在 哌啶 、 bis-triphenylphosphine-palladium(II) chloride 、 copper(l) iodide 、 正丁基锂 作用下， 以 乙醚 、 正己烷 为溶剂， 反应 18.17h， 生成 (4-Triaethylsilyl-phenyl)-trimethylsilyl-aethin
  参考文献：
  名称：

  Novel soluble pentacene and anthradithiophene derivatives for organic thin-film transistors

  摘要：

  Four new solution-processable pentacene- (PEN) and anthradithiophene- (ADT) based organic semiconductors bearing two phenylethynyl (PE-) or triethylsilylphenylethynyl (TESPE-) substituents have been synthesized, characterized, and incorporated in thin-film transistors (TFTs). The molecular structures of these four materials have been determined by single-crystal X-ray diffraction. Thin films of all four compounds have been fabricated via drop-casting and exhibited p-channel OTFT transport with hole mobilities as high as similar to 0.01 cm(2)/V s. Compared to PEN derivatives, ADT-based compounds exhibited superior device performance and photooxidative stability in ambient. The film morphologies and microstructures of these compounds have been characterized by optical microscopy and X-ray diffraction to rationalize device performance trends. (C) 2010 Elsevier B.V. All rights reserved.

  DOI：

  10.1016/j.orgel.2010.04.029

文献信息

• The protection of terminal ethynyl groups in Grignard syntheses
  作者：C. Eaborn、A. R. Thompson、D. R. M. Walton

  DOI：10.1039/j39670001364

  日期：——

  The trimethylsilyl group can be used to protect a terminal ethynyl group in Grignard syntheses. For example, a Grignard reagent can be made in tetrahydrofuran from the easily prepared compound (p-bromophenylethynyl)-trimethylsilane, and carbonation gives the acid (p-carboxyphenylethynyl)trimethylsilane, which on treatment with dilute alkali gives p-ethynylbenzoic acid in 55% overall yield. The corresponding

  三甲基甲硅烷基可用于保护格利雅（Grignard）合成中的末端乙炔基。例如，格氏试剂可从四氢呋喃中由容易制备的化合物（对-溴苯基乙炔基）-三甲基硅烷制得，碳酸化可得到酸（对-羧基苯基乙炔基）三甲基硅烷，经稀碱处理后可得到55％的对-乙炔基苯甲酸。总产量。相应的元-酸可以类似地制造。