申请人:Rohm and Haas Electronic Materials Korea Ltd.
公开号:US10564542B2
公开(公告)日:2020-02-18
New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.
本文提供的新型光阻可用于多种应用,包括负色调显影工艺。优选的光刻胶由第一种聚合物组成,第一种聚合物由第一单元组成,第一单元包含与聚合物骨架间隔开的活性含氮分子,其中含氮分子在光刻胶组合物的光刻处理过程中产生碱性裂解产物。