The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130°C, the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member. The gas barrier film of the invention exhibits an excellent gas barrier capability, excellent transparency, excellent bending resistance, and excellent heat resistance.
本发明提供了一种气体阻隔薄膜,包括基底层和至少设置在基底层一侧的气体阻隔层,基底层包括
玻璃化转变温度(Tg)大于130℃的
树脂,气体阻隔层由至少包括氧原子和
硅原子的材料形成、气体阻隔层的表层部分,根据氧原子、氮原子和
硅原子的总含量,氧原子含量率为 60%至 75%,氮原子含量率为 0%至 10%,
硅原子含量率为 25%至 35%,气体阻隔层的表层部分的薄膜密度为 2.4至4.0克/立方厘米。此外,本发明还提供了用于生产本发明的工艺、包含该气体阻挡层薄膜的电子设备部件以及包含该电子设备部件的电子器件。本发明的气体阻隔薄膜具有出色的气体阻隔能力、出色的透明度、出色的抗弯曲性和出色的耐热性。