tris(di-tert-butyphosphino)gallane | 140194-63-4

• 分子结构分类: 有机化合物 - 有机磷化合物
• 英文名称: tris(di-tert-butyphosphino)gallane
• 英文别名: Ga(tBu2P)3；Gallium;ditert-butylphosphanide；gallium;ditert-butylphosphanide
• CAS: 140194-63-4
• 化学式: C₂₄H₅₄GaP₃
• 分子量: 505.337
• InChiKey: LBGBPKCIPSJVLM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  10.21
• 重原子数：
  28
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  tris(di-tert-butyphosphino)gallane 在 trioctylamine 作用下， 以 neat (no solvent, solid phase) 为溶剂， 生成 gallium phosphide
  参考文献：
  名称：

  Sterically Induced Shape and Crystalline Phase Control of GaP Nanocrystals

  摘要：

  We demonstrate a novel synthetic scheme that can be used to control the crystalline phase and shape of GaP semiconductor nanocrystals. Our study shows that steric effects of surfactant ligands can modulate the crystalline phases and control the shapes of nanocrystals. The shape of the nanocrystals obtained varies from zero-dimensional spheres to one-dimensional rods via controlling the ratio between primary and tertiary alkylamines. III-V semiconductors (in our case: GaP) under 10 nm in width are first reported, and unique optical properties due to shape anisotropy are also observed.

  DOI：

  10.1021/ja027575b
• 作为产物：
  描述：

  氯化镓 、 lithium di-tert-butylphosphide 以 四氢呋喃 为溶剂， 以70%的产率得到tris(di-tert-butyphosphino)gallane
  参考文献：
  名称：

  Arif, Atta M.; Benac, Brian L.; Cowley, Alan H., New Journal of Chemistry, 1988, vol. 12, p. 553 - 558

  摘要：

  DOI：

文献信息

• Potential precursors to electronic materials: three coordinate cadmium in [MeCd(.mu.-tert-Bu2P)]3, the first cadmium diorganophosphide
  作者：Brian L. Benac、Alan H. Cowley、Richard A. Jones、Christine M. Nunn、Thomas C. Wright

  DOI：10.1021/ja00195a067

  日期：1989.6

  of such molecules are (Mesub 2}-Ga(mu}-t-Busub 2}As))sub 2} and (Mesub 2}In(mu}-t-Busub 2}P))sub 2}. They have also sought routes to II/V semiconductors such as Znsub 3}Psub 2}, Cdsub 3}Psub 2}, and CdPsub 2} which are used for doping photoelectrics. The authors have recently discovered that the reactive, mononuclear binary phosphido compound Ga(t-Busub 2}P)sub 3} acts as a smooth phosphido

  作为专注于电子材料前体设计和合成的项目的一部分，作者和其他人最近展示了使用单源分子来生长 III/V 族化合物半导体，例如 GaAs 和 InP。他们用于 III/V 半导体的方法是通过强的双中心双电子键将两种元素结合成同一分子，并采用易于分解过程（例如 β}-氢消除）的配体。这种分子的例子是 (Mesub 2}-Ga(mu}-t-Busub 2}As))sub 2} 和​​ (Mesub 2}In(mu}-t-Busub 2}P))sub 2}。他们还寻求获得 II/V 半导体的途径，例如用于掺杂光电的 Znsub 3}Psub 2}、Cdsub 3}Psub 2} 和​​ CdPsub 2}。作者最近发现，反应性、单核二元磷基化合物 Ga(t-Busub 2}P)sub 3} 可作为主要基团和过渡金属物种的平滑磷基转移试剂。作者在此描述了 1-3 的合成以及
• Mono-and di-nuclear phosphido and arsenido complexes of gallium; Ga(EBu^t₂)₃, Ga[PH(2,4,6-Bu^t₃C₆H₂)]₃and [Ga(µ-EBu^t₂)R₂]₂, (E = P, As; R = Me, Buⁿ)
  作者：Atta M. Arif、Brian L. Benac、Alan H. Cowley、Rolf Geerts、Richard A. Jones、Kenneth B. Kidd、John M. Power、Stuart T. Schwab

  DOI：10.1039/c39860001543

  日期：——

  The reaction of GaCl3 with three equivalents of But2AsLi, But2AsLi, or ArP(H)Li (Ar = 2,4,6-But3C6H2) affords Ga(PBut2)3, Ga(AsBut2)3, and Ga[P(H)Ar]3, respectively, whilst the reaction of GaCl3 with one equivalent of But2ELi and two equivalents of RLi results in dimeric phosphido- or arsenido-bridged compounds of the type [Ga(µ-EBut2)R2]2(E = P, As; R = Me, Bun).

  GaCl3与三当量的But2AsLi、But2AsLi或ArP(H)Li（Ar = 2,4,6-But3C6H2）反应，分别生成Ga(PBut2)3、Ga(AsBut2)3和Ga[P(H)Ar]3、GaCl3与一当量的But2ELi和两当量的RLi反应则会生成[Ga(µ-EBut2)R2]2（E = P, As；R = Me, Bun）。
• Untersuchungen zur Reaktivität des Lithiumphosphanids Li[PtBu₂] gegenüber GaCl₃ / Investigations of the Reactivity of the Lithiumphosphanide Li[PtBu₂] towards GaCl₃
  作者：Hans-Wolfram Lerner、Inge Sänger、Frauke Schödel、Michael Bolte、Matthias Wagner

  DOI：10.1515/znb-2011-0708

  日期：2011.7.1

  Single crystals suitable for X-ray diffraction of (_tBu₂P)₃Ga (monoclinic, space group Cc) were obtained from GaCl₃ and two equivalents of Li[PtBu₂] at room temperature in benzene. The phosphanylgallane (_tBu₂P)₃Ga was also produced via a one-pot approach by reaction of GaCl₃ with three or more than three equivalents of Li[PtBu2]. However, treatment of one equivalent of GaCl₃ with one equivalent of Li[PtBu₂] and subsequent protolysis yielded [_tBu₂PH₂][_tBu₂P(GaCl₃)₂ - Li(Cl₃Ga)₂PtBu₂]. Single crystals of this phosphonium salt (monoclinic, space group Cc) were obtained from benzene at room temperature.

  在苯中，通过将GaCl3和两当量的Li[PtBu2]在室温下反应，获得了适用于X射线衍射的(Bu2P)3Ga单晶（单斜晶系，空间群Cc）。通过将GaCl3与三个或三个以上当量的Li[PtBu2]反应，也可以通过一锅法制备出磷酰基镓(Bu2P)3Ga。但是，将一个当量的GaCl3与一个当量的Li[PtBu2]处理并随后进行质子溶解反应，可产生[Bu2PH2][Bu2P(GaCl3)2-Li(Cl3Ga)2PtBu2]。在室温下，从苯中获得了这种磷酸盐的单晶（单斜晶系，空间群Cc）。
• [Ga16(PtBu2)10]: A Gallium Phosphide Sheathed Core of Four Naked Ga Atoms?
  作者：Jochen Steiner、Gregor Stößer、Hansgeorg Schnöckel

  DOI：10.1002/anie.200250461

  日期：2003.4.29
• Recent advances in the preparation of semiconductors as isolated nanometric particles: new routes to quantum dots
  作者：Mark Green、Paul O’Brien

  DOI：10.1039/a904202d

  日期：——

  Nanoparticles of semiconductor materials have been the subject of intense research in the last five years owing to the novel electronic, catalytical and optical properties observed in such materials. The unusual properties of these so called quantum dots can be attributed to two main factors: the large surface to volume ratio of atoms and the confinement of charge carriers in a ‘quantum mechanical box’. Small particles of semiconductors have been prepared by a number of routes, often using colloidal chemistry methods but more recently using organometallic routes. The recent advances have resulted in high quality nanoparticles which have been incorporated into simple devices. In this article we cover some of the key advances in the preparation of nanometric particles of semiconductors. The cover illustration depicts three sizes of TOPO capped CdSe.