Borazine Based Molecular Single Source Precursors for Si/B/N/C Ceramics
作者:Fanny Schurz、Martin Jansen
DOI:10.1002/zaac.201000125
日期:——
family of borazines [(SiCl3)NB(Cln(CH3)1–n]3 was synthesized and characterized by NMR and IR spectroscopy, as wellas by single crystal structure analysis. After cross-linking with methylamine, a soluble polymer was obtained that was transformed to anall-inorganic random network of nominal composition Si1.0B1.0N3.0C0.9O0.1 (idealized SiBN3C) at 1400 °C. With an on-set of weight loss at 1840 °C and a resistance
合成了硼嗪 [(SiCl3)NB(Cln(CH3)1–n]3 家族,并通过核磁共振和红外光谱以及单晶结构分析对其进行了表征。与甲胺交联后,得到一种可溶性聚合物,即在 1400 °C 时转变为标称成分为 Si1.0B1.0N3.0C0.9O0.1(理想化的 SiBN3C)的全无机无规网络。在 1840 °C 时开始失重,并在高达 1300 °C 的纯氧,新的 Si/B/N/C 陶瓷显示出类似于先前报道的 Si/B/N/C 材料的高温性能。
Side product reduction in a silazane cleavage method
申请人:Max-Planck-Gesellschaft zur Förderung der
Wissenschaften e.V.
公开号:EP2623506A8
公开(公告)日:2013-10-09
The present invention relates to an improved silazane cleavage method, in particular for the production of molecular precursors for non-oxide inorganic ceramics.
本发明涉及一种改进的硅氮烷裂解方法,特别用于生产非氧化物无机陶瓷的分子前体。
[EN] TRANSSILYLATION CATALYSIS<br/>[FR] CATALYSE DE TRANSSILYLATION
申请人:DOW SILICONES CORP
公开号:WO2018125476A1
公开(公告)日:2018-07-05
A method for making chlorinated silazanes. The method comprises contacting: (a) a disilazane; (b) a chlorosilane; and (c) a catalyst which is a zinc salt of: (i) a sulfonic acid or (ii) a sulfonic acid imide.
Silicon boron nitride ceramic and precursor compounds, a process for
申请人:Bayer Aktiengesellschaft
公开号:US05233066A1
公开(公告)日:1993-08-03
Silicon boron nitride ceramics are produced from polyborosilizanes obtained from polymerized Cl.sub.3 Si--NH--BClX wherein X is --Cl or --NH--Si--Cl.sub.3.
Production of Si.sub.2-x P.sub.x N.sub.2+x (NH).sub.1-x, where x=0.1 to
申请人:Bayer AG
公开号:US05296211A1
公开(公告)日:1994-03-22
The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen- and phosphorus-containing compound.